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Cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and preparation thereof

A carbon nanotube composite, cadmium telluride quantum dot technology, applied in nano-optics, nanotechnology, nanotechnology and other directions, can solve the problem of nano-semiconductor quantum dots grafted graphene-carbon nanotube composite thin film optical switch material Light control and its optical, electrical and other performance issues, to achieve the effects of fast light response performance, stable properties, and simple process

Active Publication Date: 2013-07-24
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no patents related to the preparation of nano-semiconductor quantum dot grafted graphene-carbon nanotube composite film optical switch material, light control and its optical and electrical properties.

Method used

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  • Cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and preparation thereof
  • Cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and preparation thereof
  • Cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and preparation thereof

Examples

Experimental program
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Embodiment 1

[0030] (1) Using glass as the substrate, the substrate was ultrasonically washed with deionized water and ethanol alternately, and then dried in vacuum for later use.

[0031] (2) Preparation of carbon nanotube solution

[0032] The carbon nanotubes were passed through a vacuum tube furnace at 550 ° C with a volume ratio of air to nitrogen of 1:4 and a total gas flow rate of 300 cm 3 / min mixed gas atmosphere for 1 hour, then condensed and refluxed in a hydrochloric acid solution with a mass concentration of 37% at 100°C for 1 hour, then suction filtered, and repeatedly washed the filter cake with deionized water until the washing liquid was neutral. Vacuum-dry at 60°C to obtain pure carbon nanotubes, then add pure carbon nanotubes and surfactant sodium dodecyl sulfate into deionized water, and disperse ultrasonically to form carbon nanotubes at a concentration of 0.05mg / mL , Surfactant mass concentration concentration is 0.5% solution, recorded as A solution.

[0033] (3) G...

Embodiment 2

[0045] Steps (1) to (6) in this embodiment are the same as those in Embodiment 1.

[0046] (7) Prepare a sodium chloride solution with a concentration of 20mmol / L, and dilute a polydipropylene dimethyl ammonium chloride solution with a mass concentration of 30% into the sodium chloride solution to obtain polydipropylene dimethyl ammonium chloride A solution with an ammonium chloride concentration of 1 mg / mL is recorded as solution C and placed in a small beaker for later use.

[0047] (8) Prepare a sodium hydroxide solution with a pH of 11, dilute the cadmium telluride quantum dots into the sodium hydroxide solution with a pH of 11, and ultrasonicate at a low power for 5 minutes to make the cadmium telluride quantum dots in the sodium hydroxide solution with a pH of 11 Evenly dispersed in the solution, the obtained cadmium telluride quantum dot dilution is recorded as D solution, placed in a small beaker and stored away from light, for future use.

[0048] (9) Soak the dried ...

Embodiment 3

[0051] Steps (1) to (6) in this embodiment are the same as those in Embodiment 1.

[0052] (7) Prepare a sodium chloride solution with a concentration of 50mmol / L, and dilute a polydipropylene dimethyl ammonium chloride solution with a mass concentration of 30% into the sodium chloride solution to obtain polydipropylene dimethyl ammonium chloride A solution with an ammonium chloride concentration of 1 mg / mL is recorded as solution C and placed in a small beaker for later use.

[0053] (8) Prepare a sodium hydroxide solution with a pH of 11, dilute the cadmium telluride quantum dots into the sodium hydroxide solution with a pH of 11, and ultrasonicate at a low power for 5 minutes to make the cadmium telluride quantum dots in the sodium hydroxide solution with a pH of 11 Evenly dispersed in the solution, the obtained cadmium telluride quantum dot dilution is recorded as D solution, placed in a small beaker and stored away from light, for future use.

[0054] (9) Soak the dried ...

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Abstract

The invention discloses a cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and a preparation method thereof. The optical switch material consists of a graphene-carbon nanotube composite thin film with negative charges, diallyldimethylammonium chloride with positive charges and cadmium telluride quantum dots with negative charges, wherein the graphene-carbon nanotube composite thin film is used as a substrate; the diallyldimethylammonium chloride is electrostatically self-assembled on the substrate; and the diameters of the cadmium telluride quantum dots are in the range of 4 to 6nm. The preparation method disclosed by the invention has a simple process. The quantum dots of the obtained cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material are uniformly dispersed on the film. The obtained cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material has good environmental suitability and stable performance, has the advantages of optical and electric performances capable of being regulated and controlled by changing the type of the quantum dots and the amount of the quantum dots of a load, high photoelectric conversion rate, and the like, and is expected to be used for preparing a photoelectric conversion device with rapid photoresponse performance.

Description

technical field [0001] The invention relates to a cadmium telluride quantum dot grafted graphene-carbon nanotube composite film optical switch material and a preparation method thereof, belonging to the technology of light, electricity and energy conversion materials. Background technique [0002] Quantum dots are quasi-zero-dimensional nanomaterials, composed of a small number of atoms, and are semiconductor nanostructures that bind conduction band electrons, valence band holes, and excitons in three spatial directions. Semiconductor nanoparticles, which are usually prepared by chemical methods, have discrete energy level structures and optical transition characteristics similar to those in atoms. They are ideal semiconductor device nanomaterials for the development of new electronic and optoelectronic devices. The energy level structure of quantum dots can be changed by changing the nanoparticle Adjust the size of the size. [0003] Carbon is one of the ubiquitous and mos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/017B82Y20/00
Inventor 封伟彭罗文冯奕钰
Owner TIANJIN UNIV
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