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Measuring device and method for semiconductor micro-mesa array

A measurement method and semiconductor technology, applied in the direction of measuring devices, optical devices, instruments, etc., can solve the problems of sample damage, the material of the chip under test cannot be manufactured, and it is difficult to measure the depth information of the micro-mesa, and achieve the effect of rapid analysis process

Active Publication Date: 2015-08-05
苏州镓港半导体有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

Since the distance between the micro-mesas is only a few microns, it is difficult to measure the depth information of the micro-mesas by means of a probe measuring step meter and an atomic force microscope.
In addition, the above-mentioned measurement method will cause damage and destruction to the sample, and the chip material under test cannot be used for subsequent manufacturing processes.

Method used

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  • Measuring device and method for semiconductor micro-mesa array
  • Measuring device and method for semiconductor micro-mesa array
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Embodiment Construction

[0043] Aiming at the problems encountered in the current quality evaluation of semiconductor micro-table arrays, the present invention proposes an optical measurement device and method based on a wide-spectrum thermal light source illuminating a Michelson interferometer, combining the characteristics of optical coherence tomography technology and diffraction measurement technology, which can Non-destructively and quickly measure the surface topography of the micro-table array and accurately extract the geometric information such as the period, lateral size and depth of the micro-table array to meet the measurement requirements of the micro-table array.

[0044] The technical solutions in the embodiments of the present invention will be described in detail below with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the emb...

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Abstract

The invention discloses a measuring device and a measuring method of a semiconductor micro-mesa array. The method is based on an optical measuring device and an optical measuring method of a wide-spectrum thermal light source lighting interferometer, combines characteristics of optical coherence tomography and characteristics of diffraction measuring technology, is capable of measuring surface topography of the micro-mesa array fast without damage caused and fetching geometrical information such as period, lateral dimension and depth of the micro-mesa array accurately, and meets measuring requirements of the micro-mesa array.

Description

Technical field [0001] The invention relates to a measuring device and method for a semiconductor micro-mesa array with a periodic structure and a characteristic size of micrometers. The measuring device of the invention realizes the non-destructive, rapid imaging and accurate measurement of the three-dimensional size of the micro-mesa array. Background technique [0002] The formation of semiconductor micro-table arrays is a key technology for the production of infrared focal plane detector chips. One unit in the array corresponds to a pixel of the final focal plane detector. The improvement of the imaging quality of the focal plane detector requires an increase in the number of pixels and a reduction in size. The current 300,000-pixel focal plane chip microtable size is less than 10 -5 cm 2 , The distance and depth of the micro mesa are usually on the order of microns. The commonly used method for evaluating the production quality of micro-mesa arrays is to use a tool to cleave...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/00G01B11/02G01B11/22G01B11/14
Inventor 熊敏赵迎春董旭时文华张宝顺
Owner 苏州镓港半导体有限公司