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Measuring device and measuring method of semiconductor micro-mesa array

A measurement method and semiconductor technology, applied in measurement devices, optical devices, instruments, etc., can solve the problems of sample damage, inability to manufacture the tested chip material, difficulty in measuring the depth information of the micro-table, etc., and achieve the effect of fast analysis process.

Active Publication Date: 2013-04-10
苏州镓港半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the distance between the micro-mesas is only a few microns, it is difficult to measure the depth information of the micro-mesas by means of a probe measuring step meter and an atomic force microscope.
In addition, the above-mentioned measurement method will cause damage and destruction to the sample, and the chip material under test cannot be used for subsequent manufacturing processes.

Method used

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Embodiment Construction

[0043] Aiming at the problems encountered in the current quality evaluation of semiconductor micro-mesas arrays, the present invention proposes an optical measurement device and method based on Michelson interferometer illuminated by a wide-spectrum thermal light source, combined with the characteristics of optical coherence tomography and diffraction measurement technology, it can Non-destructive and rapid measurement of the surface topography of the micro-mesa array and accurate extraction of geometric information such as the period, lateral size and depth of the micro-mesa array, to meet the measurement requirements of the micro-mesa array.

[0044] The technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments ...

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Abstract

The invention discloses a measuring device and a measuring method of a semiconductor micro-mesa array. The method is based on an optical measuring device and an optical measuring method of a wide-spectrum thermal light source lighting interferometer, combines characteristics of optical coherence tomography and characteristics of diffraction measuring technology, is capable of measuring surface topography of the micro-mesa array fast without damage caused and fetching geometrical information such as period, lateral dimension and depth of the micro-mesa array accurately, and meets measuring requirements of the micro-mesa array.

Description

technical field [0001] The invention relates to a measuring device and method of a semiconductor micro-mesa array with a periodic structure and a characteristic size of microns. The measuring device of the invention realizes non-destructive, fast imaging and accurate measurement of three-dimensional dimensions of the micro-mesa array. Background technique [0002] The formation of semiconductor micro-mesa array is the key technology of infrared focal plane detector chip manufacturing, and one unit in the array corresponds to one pixel of the final focal plane detector. The improvement of the imaging quality of the focal plane detector requires an increase in the number of pixels and a reduction in the size. At present, the size of the micro-mesa of the 300,000-pixel focal plane chip is less than 10 -5 cm 2 , the spacing and depth of micro-mesas are usually on the order of microns. The commonly used method for evaluating the production quality of micro-mesas arrays is to us...

Claims

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Application Information

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IPC IPC(8): G01B11/00G01B11/02G01B11/22G01B11/14
Inventor 熊敏赵迎春董旭时文华张宝顺
Owner 苏州镓港半导体有限公司