Voltage generator

A technology of voltage generators and voltage regulators, applied to electrical components, conversion equipment without intermediate conversion to AC, output power conversion devices, etc., can solve problems such as large ripples, waste of electric energy, and poor power quality, and achieve Effect of reducing voltage ripple

Active Publication Date: 2013-05-08
WINBOND ELECTRONICS CORP
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the power requirement of the flash memory is reduced, the output voltage generated by the charge pump circuit will not be changed, which invisibly causes a waste of electric energy
On the other hand, in such a case, when the voltage difference between th

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage generator
  • Voltage generator
  • Voltage generator

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0038] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0039] figure 1 is a schematic diagram of a voltage generator 100 according to an embodiment of the present invention. The voltage generator 100 is suitable for flash memory (such as NOR flash memory), and includes a signal generator 110 , a charge pump circuit 120 and a voltage regulator 130 . In this embodiment, the charge pump circuit 120 receives the control signal group CKX and the pump enable signal group BSX generated by the signal generator 110 , and receives the reference signal VREF. The charge pump circuit 120 generates the output voltage VOUT by boosting the reference signal VREF according to the control signal group CKX and the pump enable signal group BSX.

[0040] Please note that in this embodiment, the voltage value of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a voltage generator suitable for flash memories. The voltage generator comprises a charge pump circuit and a voltage regulator. The charge pump circuit comprises at least one charge pump unit, and each charge pump unit is provided with a voltage receiving end and a voltage transferring end. The voltage receiving ends receive reference voltage, and the voltage transferring ends generate output voltage. Each charge pump unit comprises a first voltage transferring channel, a second voltage transferring channel, a first capacitor and a second capacitor. The first voltage transferring channels and the second voltage transferring channels are respectively controlled by first control signals and second control signals for breakover or turn-off. The first capacitors and the second capacitors respectively receive first pumping enable signals and second pumping enable signals. The voltage regulator receives and generates regulated output voltage according to the output voltage.

Description

technical field [0001] The invention relates to a voltage generator suitable for flash memory. Background technique [0002] In the architecture of flash memory, such as NOR flash memory, an internal voltage source is often required to provide the operating voltage. This voltage source is usually generated by a charge pump circuit and a voltage regulator. The charge pump circuit is used to provide a higher output voltage to the voltage regulator, and the voltage regulator generates the power required by the flash memory according to the output voltage. [0003] In the known technical field, a charge pump circuit usually generates an output voltage by multiplying a reference voltage by a fixed multiple. In order to meet the highest power requirements required by flash memory, the charge pump circuit is designed to provide a higher output voltage. However, when the power requirement of the flash memory decreases, the output voltage generated by the charge pump circuit will ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M3/07H02M1/14
Inventor 许增钜颜定国
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap