Wafer-level packaging method and packaging structure thereof
A wafer-level packaging and wafer technology, which is applied in the manufacturing of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of low input and output port density, large package volume, poor reliability, etc. , The effect of small package size and thin package thickness
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2013-05-22
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to semiconductor packaging technology, in particular to a wafer-level packaging method and a packaging structure thereof. Background technique
[0002] With the development of semiconductor technology, the functions of semiconductor chips are becoming more and more powerful, resulting in the continuous increase of the signal transmission volume of semiconductor chips, and the requirements for high-density input and output ports of chip units are getting higher and higher. On the other hand, the development of information technology tends to be thinner and smaller, which not only requires reducing the size of the chip package, but also requires ensuring the high reliability and stability of the chip unit.
[0003] Whether it is BGA (abbreviation for Ball Grid Array, Ball Grid Array) package or QFN (abbreviation for Quad Flat Non-leaded, square flat non-leaded) package, the traditional chip-level packaging has gradually failed to me...
Examples
Embodiment Construction
[0030] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0031] In one embodiment of the wafer level packaging method involved in the present invention, it comprises the following steps:
[0032] First, a wafer 10 comprising chip units (not shown) is provided; see figure 1 , carry out bumping process (Bumping) and secondary passivation treatment on the front side of the wafer; where the bumping process can use known methods in the industry such as electroplating, sputtering or chemical replacement, and copper, nickel, antimony, gold or Bumps 11 of materials such as tin are grown on the front of the wafer; and the secondary passivation treatment generally involves growing a secondary passivation layer 16 on the front of the wafer, wherein the secondary passivation layer can be a polyimide film, etc. ;
[0033] Please refer to figure 2 A first groove 12 is opened between adjacent bumps 11 of adjac...