A kind of LED three-dimensional photonic crystal structure and preparation method

A photonic crystal, three-dimensional technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve high precision, simplify the preparation process, and facilitate the application and promotion of effects

Active Publication Date: 2015-10-28
XI AN JIAOTONG UNIV
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  • Application Information

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Problems solved by technology

[0006] The previous literature involved the application of two-dimensional photonic crystals to LEDs, but the above-mentioned patents only related to the preparation method of three-dimensional photonic crystals, and there were no reports on the application of three-dimensional photonic crystal structures to LEDs and the preparation process combined with nanoimprinting technology

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  • A kind of LED three-dimensional photonic crystal structure and preparation method
  • A kind of LED three-dimensional photonic crystal structure and preparation method
  • A kind of LED three-dimensional photonic crystal structure and preparation method

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Embodiment Construction

[0035] see figure 1 , figure 2 , a three-dimensional photonic crystal structure for LEDs, comprising a substrate 5, an n-GaN layer 4, an active layer 3, and a p-GaN layer 1 sequentially from bottom to top. The upper surface of the p-GaN layer is etched with a plurality of cylindrical holes with a diameter of 200nm to 800nm ​​to form a 3D photonic crystal unit array. Each cylindrical hole forms an equilateral triangle with each other, and the side length a ranges from 400nm to 1800nm; The distance 2 between the bottom of the cylindrical hole and the active layer 3 is h<40nm. The formula for calculating the value of h is as follows:

[0036] h = λ 2 π ϵ GaN , - ϵ metal , ϵ ...

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Abstract

The invention discloses an LED (Light-emitting Diode) three-dimensional photonic crystal structure and a preparation method. The preparation method is characterized in that a nanoimprint lithography technique, an evaporation technique, a vapor deposition technique and the like are combined to prepare; multiple cylindrical holes are etched on an upper surface of a p-GaN layer to form a 3D (three-dimensional) photonic crystal cell array; equilateral triangle arrangement is formed among the cylindrical holes; a distance h from bottom parts of the cylindrical holes and an active layer is smaller than 40nm; two materials with different refractive indexes are alternately deposited from the bottom to the upper part in each cylindrical hole; and finally the holes are sealed by a layer of inactive solid materials. According to a three-dimensional photonic crystal, energy in the active layer can be coupled, the luminous efficiency of an LED is improved, a better photonic band gap can be generated, the control capability on the wavelength and the direction of light emergency is enhanced, and the optical property of the LED is comprehensively improved.

Description

technical field [0001] The invention relates to a preparation technology of an optoelectronic device, in particular to a LED three-dimensional (3D) photonic crystal structure and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diodes (Light Emitting Diode, hereinafter referred to as LED) have a wide range of applications in the fields of signal display, backlight and solid-state lighting, especially LEDs based on III-V compound gallium nitride (GaN) materials. The technology is more mature. But at present, the luminous efficiency of LED is still not up to the ideal level, so the use of photonic crystals to improve the luminous efficiency of LED is an important research field. [0003] Since John and Yabolonivitch proposed the concept of photonic crystals in 1987, photonic crystals have not only become an important research field in micro-nano optoelectronics and quantum optics, but also have been widely used in information optics and...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L33/24H01L33/26H01L33/00
Inventor云峰赵宇坤
OwnerXI AN JIAOTONG UNIV