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Method for determining secondary electron emission characteristics in gas adsorption state

A secondary electron emission and gas adsorption technology, applied in the field of physics, can solve the problems of no secondary electron emission coefficient, determination method, and inability to test the secondary electron emission coefficient.

Active Publication Date: 2014-11-19
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

[0003] At present, there are three main ways to obtain the secondary electron emission coefficient: 1. Using Monte Carlo to simulate, most of the existing simulation methods are ideal planes, and a method for determining the secondary electron emission coefficient with surface topography has been proposed , but there is no method for determining the secondary electron emission coefficient under the gas adsorption state; 2. to test the secondary electron emission coefficient on the surface of the material, because the working pressure of the electron gun will be lower than 10 during the test. -6 Torr, so it is impossible to test the secondary electron emission coefficient under low pressure or actual pressure; 3. Calculate according to the existing secondary electron emission model. The establishment of the model depends on the simulation results and experimental results. There is no gas in the current general model Adsorption considerations

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  • Method for determining secondary electron emission characteristics in gas adsorption state
  • Method for determining secondary electron emission characteristics in gas adsorption state
  • Method for determining secondary electron emission characteristics in gas adsorption state

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Embodiment Construction

[0074] Below in conjunction with accompanying drawing and specific embodiment, the present invention is described in further detail:

[0075] The present invention firstly determines the properties of the material, the gas type, pressure, temperature of the space where the material is located, and the state of incident electrons (position, energy and angle), and obtains the secondary electron emission characteristics under the gas adsorption state by the following methods, such as: figure 1 Shown is the flow chart of the present invention to determine the secondary electron emission characteristics in the gas adsorption state.

[0076] 1. Determine the density distribution of the adsorbed gas layer under the pressure of the material

[0077] ρ(z)=C 1 exp(-C 2 z)+p / k B T

[0078] Among them: ρ(z) is the density distribution of the surface adsorption layer in the normal direction z at the interface between the gas and the material; p is the gas pressure where the material is...

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Abstract

The invention relates to a method for determining secondary electron emission characteristics in a gas adsorption state. Based on an existing scattering process of electrons inside a material after being emit on an ideal surface and an electron trajectory tracking process, the change of a work function and various scattering processes of the electrons and an adsorption gas are added, and the energy and angles of the electrons are determined by adopting different methods according to different movement positions of the electrons, for example the electrons are in thickness h of an gas adsorption layer, or the electrons enter a material layer from the gas adsorption layer, or the electrons is emergent from the material layer to the gas adsorption layer, or the electrons are inside the material and the like to obtain secondary electron emission coefficients so as to determine the secondary electron emission characteristics in the gas adsorption state. The method can be used for providing an effective means for obtaining the secondary electron emission characteristics on the metal surface in the actual gas adsorption state.

Description

technical field [0001] The invention relates to a method for determining secondary electron emission characteristics in gas adsorption state, belonging to the field of physics. Background technique [0002] The secondary electron emission coefficient of materials is not only an important parameter to characterize the micro-discharge of high-power microwave components of space vehicles, but also an important basis for material selection, analysis and design of high-power microwave components of space vehicles. It has been proved that the surface state factors such as surface morphology, electric field near the surface and surface gas adsorption are the key factors affecting the difference between the simulated and experimental results of the secondary electron emission coefficient. The actual metal material is always in a certain pressure atmosphere. Even under high vacuum conditions, one or more monolayers of gas will be adsorbed on the surface of the material every second. ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/22
Inventor 张娜崔万照张洪太王瑞曹猛
Owner XIAN INSTITUE OF SPACE RADIO TECH