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3D semiconductor device

A semiconductor, three-dimensional technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as increasing the integration degree of two-dimensional semiconductor devices or planar semiconductor devices, limiting, increasing the fineness of patterns, etc.

Active Publication Date: 2018-04-27
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the extremely expensive process equipment required to increase the pattern fineness has a practical limit on increasing the integration of two-dimensional semiconductor devices or planar semiconductor devices

Method used

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Examples

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no. 3 example

[0093] Figure 12 is shown based on image 3 A flow chart of the method for manufacturing a semiconductor device of the third example illustrated in, Figure 13 to Figure 15 is exemplarily shown according to image 3 A cross-sectional view of the method of manufacturing a semiconductor device of the third example illustrated in .

[0094] refer to image 3 , Figure 12 and Figure 13 , a first patterning process S21 may be performed on the stack ST. According to this example, the first patterning process S21 may include a plurality of etching steps, wherein each etching step may be performed in a common single layer etching manner.

[0095] For example, the first patterning process S21 may include at least two etching steps, each of which is performed to etch away portions of the stack ST located on the first region R1 and the second region R2 Up to the thickness of the vertical pitch P of the horizontal layer 100 . In order to realize the etching step in a common etchin...

no. 4 example

[0104] Figure 16 is shown based on image 3 A flow chart of the method for manufacturing a semiconductor device of the fourth example illustrated in, Figure 17 and Figure 18 is exemplarily shown according to image 3 A cross-sectional view of a method of manufacturing a semiconductor device of a fourth example illustrated in .

[0105] refer to image 3 , Figure 16 and Figure 17 , you can refer to Figure 5 A first patterning process S21 is performed on the described stack ST. In this example, the first patterning process S21 may include an etching step performed in a selective multilayer etching manner.

[0106] For example, the first patterning process S21 may include etching away a portion of the stack ST on the second region R2 to a thickness corresponding to a multiple of the vertical pitch P of the horizontal layer 100 . In some embodiments, the etch depth may be half the height of the stack ST, or may be half the total stack height of the horizontal layer ...

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Abstract

A three-dimensional semiconductor device is provided. The device may include electrodes sequentially stacked on the substrate to form an electrode structure. Each electrode may include: a connection part protruding horizontally outward from a sidewall of one electrode positioned thereon; and an alignment part having a sidewall coplanar with a sidewall of the one electrode positioned thereon or below. Here, at least two of the electrodes disposed vertically adjacent to each other may be disposed in such a manner that the alignment portions of the at least two electrodes have side walls substantially aligned to be coplanar with each other.

Description

[0001] This patent application claims priority from Korean Patent Application No. 10-2012-0091920 filed with the Korean Intellectual Property Office on Aug. 22, 2012, the entire contents of which are hereby incorporated by reference. technical field [0002] Embodiments of the inventive concept relate to a semiconductor device, and in particular, to a method of forming a stack of electrodes and manufacturing a three-dimensional semiconductor device using the same. Background technique [0003] Higher integration semiconductor devices are required to meet consumer demands for better performance and lower prices. For semiconductor memory devices, since their degree of integration is an important factor for determining product prices, it is necessary to greatly increase the degree of integration. For typical two-dimensional semiconductor memory devices or planar semiconductor memory devices, since their degree of integration is mainly determined by the area occupied by a unit m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48
CPCH01L2924/0002H10B41/50H10B41/20H10B43/35H10B43/50H10B43/20H10B43/27H01L2924/0001H01L2924/00H01L23/49844H01L27/0688H01L23/5226H01L23/498H10B63/84H01L21/31144H01L21/32139H01L21/441H01L21/76805H01L21/76877
Inventor 殷东锡李宁浩李俊熙李锡元申有哲
Owner SAMSUNG ELECTRONICS CO LTD