Wafer processing method

Abstract

The invention provides a method for processing a wafer. The method processes the wafer in a manner that bad conditions such as cracks caused by foreign matters between a clamp disk workbench and the wafer can be prevented in the following sequences. A processing device is configured in a way that the center of the wafer (W) is maintained by being positioned on the rotary center of the clamp disk workbench (5); a measurement member (6) is positioned near the peripheral chamfer part (91) of the wafer (W); the clamp disk workbench (5) is enabled to rotate while height measurement is carried out within the periphery of the peripheral chamfer part (91) of the wafer (W); and when the change in height of the wafer (W) exceeds a specified value, an error is notified, and when the change in height of the wafer (W) is within a specified value, a cutting tool is utilized to remove the peripheral chamfer part (91) of the wafer (W).

Description

technical field [0001] The present invention relates to a wafer processing method in which the outer periphery of the wafer is cut with a cutting tool. Background technique [0002] In recent years, along with thinning and miniaturization of electrical equipment, thinning of wafers is desired. Also, in the past, chamfering was performed on the outer periphery of the wafer to prevent cracks and dust generation during the manufacturing process. Therefore, there is a problem that when the thickness of the wafer is ground to, for example, 100 μm or less, the outer periphery of the chamfered wafer becomes a knife-edge shape, and chips are generated from the outer peripheral side, resulting in damage to the wafer. In order to solve this problem, there has been proposed a method of removing (trimming) a peripheral chamfer that may become a cutting edge from the peripheral portion of the wafer after thinning of the wafer (for example, refer to Patent Document 1). [0003] In the p...

AI Technical Summary

Problems solved by technology

Therefore, there is such a problem that when the thickness of the wafer is ground to, for example, 100 μm or less, the outer periphery of the chamfered wafer becomes a knife-edge shape, and chips are generated from the outer peripheral side, resulting in damage to the wafer.

Therefore, when foreign matter such as dirt is mixed between the upper surface of the chuck table and the back surface of the outer peripheral chamfer of the wafer, not only the depth of cut at the raised portion becomes deeper due to the presence of the foreign matter, but also During the process, there may be problems such as cracks from the part where the foreign matter exists.

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