An Enhanced Algan/gan Heterojunction Field Effect Transistor

Abstract

The invention discloses an enhanced AlGaN / GaN high electron mobility transistor. According to the new structure, P-type doped GaN is adopted for the portion from the source end to a gate electrode of a high-resistance GaN layer where 2DEG of the transistor is located, so that when the gate voltage is zero, electrons cannot reach a source electrode to switch on the transistor because of the stop effect of a barrier on the interface between P-type GaN and 2DEG, and the transistor is in the switch-off state; when a positive voltage is applied to the gate electrode, the concentration of 2DEG under the gate electrode is increased, the energy band height of 2DEG decreases, as the voltage further increases, the energy band height of 2DEG further decreases, the thickness of the barrier of 2DEG and P-type GaN keeps decreasing till the barrier is tunneled under the action of the drain-source voltage, and then the transistor is switched on.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an AlGaN / GaN heterojunction field effect transistor. Background technique [0002] Due to the limitations of the first two generations of semiconductor materials represented by Si and GaAs, the third generation of wide-bandgap semiconductor materials has developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in that it has a polarization effect compared with Si, GaAs and silicon carbide (SiC). AlGaN / GaN high electron mobility transistors have been developed by taking advantage of this special performance. AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (2DEG) at the heterojunction interface through spontaneous polarization and piezoelectric polari...

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Problems solved by technology

[0005] In the manufacturing process of trench gate enhanced devices, it is difficult to accurately control the thickness of the AlGaN layer and the etching depth of the trench gate, so the process repeatability is poor, and the controllability of the threshold voltage is poor; in addition, the etching damage is large, resulting in gate Problems such as large leakage current

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