Terahertz sensor for surface plasma resonance

A surface plasmon and sensor technology, applied in the field of sensors, can solve problems such as the inability to use the terahertz band

Active Publication Date: 2015-01-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a surface plasmon resonance terahertz sensor, which is used to solve the problem that the surface plasmon resonance sensor in the prior art cannot be used in the terahertz wave band

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  • Terahertz sensor for surface plasma resonance
  • Terahertz sensor for surface plasma resonance
  • Terahertz sensor for surface plasma resonance

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Embodiment Construction

[0032] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

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Abstract

The invention provides a terahertz sensor for surface plasma resonance. The terahertz sensor at least comprises a heavily doped semiconductor film comprising a first surface and a second surface opposite to the first surface, an optical waveguide coupling layer formed on the first surface of the heavily doped semiconductor film, a sensing chip which is formed on the second surface of the heavily doped semiconductor film and arranged in a sample channel and is in contact with molecules to be detected, a terahertz quantum cascade laser for emitting terahertz light to the optical waveguide coupling layer, and a terahertz detector for detecting the terahertz light. According to the terahertz sensor, terahertz laser is generated by a laser device, total reflection is generated on the surfaces of the optical waveguide coupling layer and the heavily doped semiconductor film, evanescent waves are generated at an interface, surface plasma waves are generated between the heavily doped semiconductor film and a molecule-sensitive film, and the evanescent waves and the surface plasma waves form resonance by adjusting incident light and resonance angles; the sensor can be used for detecting biomacromolecules at terahertz resonance frequency band.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a terahertz sensor, in particular to a surface plasmon resonance terahertz sensor. Background technique [0002] The terahertz band is an undeveloped band between the mid-infrared and microwaves in the spectrum, and is called the "terahertz gap". It has great scientific significance and application prospects in physics, material science, life science, astronomy, information and national defense technology. Due to the important academic significance and application value of the terahertz band, in recent years, terahertz physics, devices and applications have become one of the most popular frontier research fields in the world. [0003] Surface plasmon resonance technology is a technology developed in the 1990s that can sensitively measure the change of the dielectric function of the measured object. This technology has a very wide range of applications in physics, chemistry and ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/552
Inventor 王丰曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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