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Trench type power device and method of forming the same

A power device, trench type technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reducing the charge and discharge capacity, low Rdson of power devices, etc.

Active Publication Date: 2017-05-17
HEJIAN TECH SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, conventional trench power devices only have a first oxide layer at the bottom of the trench, a second oxide layer as a channel on the sidewall of the trench, and an oxide layer on the second oxide layer for The gate layer that fills the remaining part of the trench, which cannot achieve the purpose of keeping the Rdson of the power device at a relatively low level while reducing the charge and discharge capacity

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  • Trench type power device and method of forming the same
  • Trench type power device and method of forming the same
  • Trench type power device and method of forming the same

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Embodiment Construction

[0031] The present invention will now be described more fully hereinafter with reference to the accompanying drawings in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals designate like elements throughout. In the drawings, the size and relative sizes of layers and regions are exaggerated for clarity.

[0032] Figure 10 is a cross-sectional view of a trench power device according to an embodiment of the present invention. Figure 11 is a schematic plan view of a plurality of trench power transistors according to an embodiment of the present invention, wherein Figure 1-Figure 10 for along Figure 11 Cross-sectional view taken along the midline I...

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Abstract

The invention provides a trenched power device and a forming method thereof. The trenched power device comprises a trench formed in a substrate, a first oxide layer arranged on part of the bottom and the side wall of the trench and conformal with the trench, a first gate electrode layer arranged in the trench to partially fill the trench, a second gate electrode layer arranged on the first gate electrode layer to fill the remaining part of the trench, a dielectric layer sandwiched between the first gate electrode layer and the second gate electrode layer and arranged on part of the side wall of the trench, and a contact piece used for connecting first and second polycrystalline silicon layers.

Description

technical field [0001] The invention relates to a trench power device, in particular to a trench power device with a T-shaped gate, and a method for forming the trench power device. Background technique [0002] Trench-type power devices are widely used in the semiconductor industry. However, in order to increase the switching speed of the transistor, make it have a higher operating frequency and reduce the switching loss caused by the switching action, it is necessary to reduce the gate resistance of the power device as much as possible without greatly increasing the on-resistance. The amount of charge (Qg) of the charging and discharging capacitor. For trench-type power devices (e.g., transistors), it is desirable to maintain the on-resistance (Rdson) of the power device at a relatively low level without increasing the thickness of the trench sidewall oxide layer as the gate insulating layer In the case of , the thickness of the oxide layer at the bottom of the trench is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/772H01L29/10H01L21/335
Inventor 瞿学峰石亮
Owner HEJIAN TECH SUZHOU