C-waveband high-power solid-state power amplifier

A solid-state power, high-power technology, used in power amplifiers, high-frequency amplifiers, etc., can solve the problems of power-off maintenance, power amplifier maintenance and reliability reduction, which cannot meet the high reliability and rapid maintenance of scattering communication, and achieve high reliability. Effect

Inactive Publication Date: 2016-06-01
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the solid-state power amplifiers widely used in the C-band of the scattering communication system are mostly in the order of 100 watts, and each power amplifier module

Method used

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  • C-waveband high-power solid-state power amplifier
  • C-waveband high-power solid-state power amplifier

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Embodiment Construction

[0016] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0017] figure 1 It is a schematic structural diagram of a C-band high-power solid-state power amplifier of the present invention. The solid-state power amplifier of the present invention includes a digitally controlled attenuator 1, a driver stage power amplifier 2, a final stage power amplifier 4, a power coupler 6, a waveguide circulator 7, and a power Detection module 8 , reflective coupler 9 , power load 10 , monitoring unit 11 and power supply 12 .

[0018] The digital control attenuator 1 completes the program-controlled level control of the input radio frequency signal; the driving stage power amplifier 2 provides the driving radio frequency signal required by the final stage power amplifier; the final stage power amplifier 4 completes the power amplification of the radio frequency signal; the power coupler 6, the waveguide cir...

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Abstract

The invention discloses a C-waveband high-power solid-state power amplifier. The power amplifier comprises a drive stage power amplifier, a final stage power amplifier, a monitoring unit and a power supply. The final stage power amplifier comprises a one-to-eight splitter, first to eighth hot plug power amplifiers and an eight-in-one combiner; the splitter and the combiner are mutually isolated with the hot plug power amplifiers respectively through a binary Wilkinson power splitting circuit and a high power waveguide magic T; and the hot plug power amplifiers realize electrified hot plug through controlling power supply and detecting an output power and a reflection power. According to the power amplifier provided by the invention, the electrified hot plug of the final stage power amplifier is realized in adoption of the splitter/combiner with isolated ports and the modularized hot plug power amplifiers; the device maintainability is improved; the system stability is enhanced; and in adoption of eight-way hot plug power amplifiers, the 1KW power output of the continuous waves is realized through parallel power combination.

Description

technical field [0001] The invention relates to a C-band high-power solid-state power amplifier in the communication field, and is particularly suitable for a transmission device for completing radio frequency signal power amplification in a transmission channel of a C-band communication system. Background technique [0002] With the development of scattering communication technology, the requirements for the transmission power of the C-band communication system are increasing. At present, the solid-state power amplifiers widely used in the C-band of the scattering communication system are mostly in the order of hundreds of watts, and each power amplifier module is fixed on the heat sink by screws. The reduction of maintenance and reliability cannot meet the requirements of high reliability and rapid maintenance of scattered communication. Contents of the invention [0003] The technical problem to be solved by the invention is to provide a C-band all-solid-state power am...

Claims

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Application Information

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IPC IPC(8): H03F3/20H03F3/189
CPCH03F3/20H03F3/189
Inventor 杨作成李楠张静朱秀敏张志忠杨贺仝信男
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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