16 results about "Solid state power amplifier" patented technology

The invention discloses a Ka-band 2000W solid-state power amplifier, which relates to the field of power amplifiers, and comprises a Ka monitoring and pre-stage power amplifier, a Ka final-stage power amplifier and a Ka high-power synthesis network, the Ka monitoring and pre-stage output end is in flexible connection with the eight Ka last-stage power amplifiers, and the Ka last-stage power amplifiers are in hard connection with the Ka high-power synthesis network through waveguides. A solid-state system is adopted for design, a domestic GaN solid-state power amplifier chip is utilized for synthesis, the power amplifier adopts a low-voltage working mode, the power chip is long in service life, the linear index of the power amplifier is good, and the power amplifier is different from the defects that a vacuum tube power amplifier is large in size and weight, has breakdown risks during high-voltage working and cannot respond to emergency scenes immediately. The Ka-band high-power amplifier is a development trend of a Ka-band high-power amplifier, and has the advantages of high output power and convenience in maintenance.

The utility model discloses a broadband waveguide bridge with a microstrip probe and a solid-state power amplifier thereof. The solid-state power amplifier comprises a first waveguide bridge assembly, a second waveguide bridge assembly and a waveguide-to-microstrip probe assembly, the first waveguide bridge assembly comprises a C-shaped first waveguide channel assembly and a C-shaped second waveguide channel assembly which are arranged back to back, a plurality of connection coupling parts connected between the first waveguide channel assembly and the second waveguide channel assembly, and coupling windows arranged between the adjacent connection coupling parts; the waveguide-to-microstrip probe assembly comprises a first guided wave-to-microstrip assembly and a second guided wave-to-microstrip assembly which are opposite in mirror image; the first waveguide-to-microstrip assembly comprises a high-order mode suppression cavity, an air cavity, a microstrip probe substrate arranged in the high-order mode suppression cavity and the air cavity, and a probe line, a high-resistance line, an impedance gradient line and a microstrip line which are printed on the microstrip probe substrate and are connected in sequence. The utility model has the advantages of simple structure, high isolation, good port matching, low loss and the like.

The utility model relates to the technical field of amplifiers, and discloses a typical broadband solid-state power amplifier with a buffering function, which comprises a bottom plate, a buffering device is mounted at the top of the bottom plate, a placing plate is fixedly connected to the top of the buffering device, and a power amplifier body is placed at the top of the placing plate. Top heat dissipation holes are formed in the top of the power amplifier body, and a power port is formed in one side of the power amplifier body. According to the typical broadband solid-state power amplifier with the buffering function, when a user puts the power amplifier body on the top of the placing plate, the buffering device is installed at the bottom of the placing plate, and the buffering and damping effects are achieved through the buffering device; when the power amplifier body is used, the situation that fastening between parts and a chip in the power amplifier body becomes loose due to long-term vibration, so that the equipment parts and the chip are separated and mutually touch to cause short circuit or damage is avoided.

The application discloses a kind of broadband solid-state power amplifier and pulse modulation method, belong to amplifier technical field, including amplifier unit, detection control unit, power module and power detection module, it solves the technical problem of improving the protection of GaN power device in high-power power amplifier, accurate control amplitude and improve the maintainability of modularity, the local grid negative voltage management of the present application is realized, power-on power-down timing control, drain pulse modulation and temperature monitoring, effectively avoid GaN chip damage due to power timing error or local overheating, significantly improve the reliability of the whole machine, support open-loop gain control and closed-loop automatic level control ALC two modes, effectively reduce the impact of pulse current on power bus, improve the flatness of output pulse top, ensure the consistency of each unit radio frequency phase and power supply timing, improve the synthesis efficiency, can be quickly positioned and replaced, greatly reduce the average repair time, improve the availability and usability of equipment.

The present application relates to the field of microwave communication and radar technology, disclose a kind of microwave solid-state power amplifier power synthesis control method and system, the method comprises: obtaining microwave signal to be synthesized and each branch signal and extracting original instantaneous envelope data, its amplitude is smoothed to obtain smooth envelope data sequence;According to its trend fitting, obtain synthesis control characteristics;Obtain each branch initial signal and according to the characteristics, carry out consistency correction processing in time and space dimension, obtain response alignment data;Accordingly, carry out closed-loop parameter iterative optimization processing, generate branch synchronous compensation signal containing distortion evaluation factor;If the factor is over limit, carry out waveform high-precision reconstruction processing to generate high-fidelity signal data;The data is carried out multi-path collaborative dynamic equalization processing to obtain system balance state index, according to adaptive stability control processing, output target synthesis power signal.The present application can realize the dynamic accurate adjustment of power synthesis branch parameter, improve output stability.

The application discloses a broadband microwave solid-state power amplifier design method based on a reconfigurable matching network, and belongs to the technical field of microwave power amplifier design. The method acquires transistor model parameters and a target working frequency band, constructs an initial topology of a reconfigurable matching network containing tunable element nodes and switch switching paths, performs discretization sampling on the target frequency band to obtain a plurality of key frequency points, dynamically adjusts element values and switch on-off states for each key frequency point through an iterative search algorithm to generate a corresponding power matching parameter set, compares the power matching parameter sets of adjacent key frequency points in terms of difference degree, identifies parameter jump intervals with a difference degree exceeding a tolerance threshold, positions mismatch element nodes according to the parameter jump intervals, performs a switch path reconstruction operation, and generates a broadband matching parameter sequence. The application can effectively solve the performance deterioration problem of a broadband power amplifier matching network caused by parameter mutation when working across frequency bands.

This invention provides a microwave solid-state power amplifier, relating to the fields of microwave communication and radio frequency amplification technology, including a main control unit, a pre-stage driver component, a final-stage synthesizer component, a liquid-cooled heat dissipation component, and a coupling detector component. The pre-stage driver component internally incorporates an electrically adjustable attenuator, and the final-stage synthesizer component contains multiple final-stage radio frequency chips. In closed-loop automatic level control mode, the main control unit dynamically adjusts the attenuation control code based on the real-time detector voltage. The main control unit continuously collects the real-time operating current of the final-stage radio frequency chips. When the operating current of some chips drops to the lower limit and the attenuation control code shows a continuous downward trend and exceeds the preset tolerance range, a cascade overload risk is determined. After triggering the overload risk, the main control unit terminates the closed-loop automatic level control mode, retrieves the preset degradation safety attenuation code, sends it to the electrically adjustable attenuator, and performs open-loop degradation gain control operation. This invention effectively prevents normally functioning final-stage radio frequency chips from being damaged by abnormal compensatory over-excitation.

A solidstate amplifier includes at least one interconnection, between a microstrip and a linearized impedance matching waveguide ridge, the interconnection being provided with a clamping device.

The application provides a kind of satellite-borne solid-state power amplifier control and telemetry circuit, comprising: detection diode, four-way operational amplifier, stabilivolt, two-way operational amplifier and double negative voltage controlled attenuator;The detection diode is connected with microwave coupler;Four-way operational amplifier is connected with positive power voltage;The stabilivolt is connected with four-way operational amplifier output end;The two-way operational amplifier is connected with positive and negative power voltage;Double negative voltage controlled attenuator is connected with two-way operational amplifier two output ends;When input power increases, the direct current voltage that detection diode detects increases, the detection voltage that four-way operational amplifier input increases, the control positive pressure 1 that four-way operational amplifier output increases, the control negative pressure 1 that two-way operational amplifier output increases, so that the attenuation value of double negative voltage controlled attenuator increases, and input power decreases.After reaching dynamic balance, input power maintains the level before change, and output power does not change.

The invention relates to a novel reflection-type analog pre-distortion circuit, and the circuit comprises a 90-degree bridge which is used for generating a first signal and a second signal, the phase difference of which is 90 degrees; the Wilkinson equal power divider is used for equally dividing the first path of signal into two paths of equal signals; the two multiplication reflection branches are used for generating two nonlinear reflection signals; the Wilkinson equal power divider is also used for synthesizing the two paths of nonlinear reflection signals into a first reflection signal, and the fixed reflection branch is used for reflecting the second path of signal to obtain a second reflection signal; and the 90-degree bridge is also used for performing vector synthesis on the first reflection signal and the second reflection signal to output a pre-distortion signal. The invention can form effective complementation with the nonlinear characteristic of the solid-state power amplifier, thereby improving the linearity of the solid-state power amplifier.

1. The name of the design product: broadband microwave solid-state power amplifier. 2. The use of the design product: the design product is used for microwave signal amplification. It is widely used in the research and production of wireless communication systems, radars, etc. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The application is based on an X-band power amplifier system of an eight-port radio frequency pulse amplitude control microstrip network, which is composed of a power amplifier driving and sampling comparison module, an eight-port radio frequency pulse amplitude control microstrip network module, a power amplifier module and a power amplifier control and power supply module; a linear frequency modulation pulse signal generated by a radar transmitter is input to the power amplifier driving and sampling comparison module, is amplified by the power amplifier module again through the eight-port radio frequency pulse amplitude control microstrip network module and is output; the power amplifier control and power supply module controls and supplies power to the whole system. The application embeds an eight-port radio frequency pulse amplitude control microstrip network in a radar power amplifier system, directly controls the amplitude of a radar radio frequency pulse envelope signal in a solid-state power amplifier, reduces the sidelobe amplitude of a pulse compression signal in a final receiver, improves the detection ability of a small target and the display effect of a radar echo, and reduces the cost and design complexity of a radar transmitter.

A hybrid planar combiner for use in broadband high power multi-component power amplifier architectures in planar solid-state power amplifiers, which does not comprise impedance converters in the power amplifier layer, is suitable for hermetic construction, supports effective cooling infrastructure and enables easy in-circuit applications.

Methods and apparatus for processing a substrate. For example, a processing chamber may include: a power source; an amplifier connected to the power source, the amplifier including at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and the amplifier being configured to amplify the power level of an input signal received from the power source to heat the substrate in the processing volume; and a cooling plate configured to receive a coolant to cool the amplifier during operation.

The utility model discloses a double-ridge waveguide and microstrip bridge combined synthesizer and a solid-state power amplifier thereof, comprising a driving amplifier for driving and amplifying an input signal; the double-ridge waveguide distributor is connected with the driving amplifier and is used for uniformly distributing the input signal which is driven and amplified into a plurality of paths of distribution signals; the first 90-degree bridge assembly is connected with the double-ridge waveguide distributor and is used for carrying out 90-degree phase conversion on the distributed signals; the final-stage synthesis amplifier assembly is connected with the first 90-degree bridge assembly and is used for amplifying the distribution signal subjected to 90-degree phase conversion to obtain a second amplification signal; the second 90-degree bridge assembly is connected with the final-stage synthesis amplifier assembly and is used for carrying out 90-degree phase conversion on the second amplification signal; the double-ridge waveguide synthesizer and the second 90-degree bridge assembly are used for synthesizing the second amplified signal subjected to 90-degree phase conversion to obtain a synthesized signal; and the waveguide port is connected with the double-ridge waveguide synthesizer.

The application provides a microwave solid-state power amplifier, relates to the microwave communication and radio frequency amplification technical field, and comprises a master control unit, a front-stage driving assembly, a final-stage synthesis assembly, a liquid cooling and heat dissipation assembly and a coupling detection assembly. The front-stage driving assembly is internally provided with an electrically-controlled attenuator, and the final-stage synthesis assembly comprises a plurality of final-stage radio frequency chips. In a closed-loop automatic level control mode, the master control unit dynamically adjusts an attenuation control code according to a real-time detection voltage. The master control unit continuously collects real-time working currents of the final-stage radio frequency chips, and when the working currents of part of the chips drop to a lower limit and the attenuation control code presents a continuous downward trend and breaks through a preset tolerance range, it is determined that a cascaded overload risk is generated. After the overload risk is triggered, the master control unit suspends the closed-loop automatic level control mode, calls a preset degraded safety attenuation code and sends it to the electrically-controlled attenuator, and executes an open-loop degraded gain control operation. The application effectively prevents normally working final-stage radio frequency chips from being damaged by abnormal compensatory overexcitation.