Silicon carbide semiconductor device, and method for producing same
A semiconductor and silicon carbide technology, applied in the field of silicon carbide semiconductor devices and their manufacturing, can solve the problems of increasing gate capacitance, delimiting channel length, and difficulty in masking, etc.
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Embodiment approach 1
[0058] 1. The silicon carbide semiconductor device according to the first embodiment
[0059] The silicon carbide semiconductor device 100 according to Embodiment 1 is the silicon carbide semiconductor device according to the first aspect of the present invention. The silicon carbide semiconductor device 100 according to Embodiment 1 is a power MOSFET.
[0060] Furthermore, in the following embodiments, the n-type is defined as n - , n, n + , n ++ in the order of p-type in accordance with p - , p, p ++ The order of indicates that the dopant concentration of the conductivity type becomes higher. These are approximations that represent relative magnitudes of dopant concentrations, such as n + type of region has a ratio n - Type area and n type area are higher, and than n ++ Type regions with low dopant concentration, but do not necessarily have a specific same dopant concentration.
[0061] The silicon carbide semiconductor device 100 related to Embodiment 1 is, for e...
Embodiment approach 2
[0108] The silicon carbide semiconductor device 102 according to Embodiment 2 is the silicon carbide semiconductor device according to the first aspect of the present invention. The silicon carbide semiconductor device 102 according to Embodiment 2 is a power MOSFET.
[0109] The silicon carbide semiconductor device 102 according to the second embodiment basically has the same configuration as the silicon carbide semiconductor device 100 according to the first embodiment, but the planar position of the end of the gate electrode is the same as that of the silicon carbide semiconductor device according to the first embodiment. 100 different. That is, in the silicon carbide semiconductor device 102 according to the second embodiment, as Figure 10 As shown, the end of the gate electrode 126 is located at n ++ type source region 120 .
[0110] In this way, although the silicon carbide semiconductor device 102 according to the second embodiment differs in the planar position of ...
Embodiment approach 3
[0116] The silicon carbide semiconductor device 104 according to the third embodiment is the silicon carbide semiconductor device according to the first aspect of the present invention. The silicon carbide semiconductor device 104 according to the third embodiment is a power MOSFET.
[0117] The silicon carbide semiconductor device 104 according to the third embodiment basically has the same configuration as the silicon carbide semiconductor device 100 according to the first embodiment, but the planar position of the end of the gate electrode is the same as that of the silicon carbide semiconductor device according to the first embodiment. 100 different. That is, in the silicon carbide semiconductor device 104 according to the third embodiment, as Figure 11 As shown, the end of the gate electrode 126 is located at n ++ The n-type source region 120 formed between the n-type semiconductor region 114 + type semiconductor region 134 . Furthermore, in the third embodiment, n ...
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Abstract
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