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System and method for controlling temperature of workpiece

A workpiece and controller technology, applied in general control systems, control/regulation systems, program control, etc., to solve problems such as difficulty in maintaining temperature gradients

Active Publication Date: 2020-11-24
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the workpiece and platen act to spread heat, it may be difficult to maintain a temperature gradient between two adjacent parts of the workpiece

Method used

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  • System and method for controlling temperature of workpiece
  • System and method for controlling temperature of workpiece
  • System and method for controlling temperature of workpiece

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Embodiment Construction

[0018] As described above, the manufacture of semiconductor elements includes various processes including etching processes, deposition processes, and ion implantation. One or more of these processes may be temperature sensitive. In certain embodiments, this temperature dependence can be used to improve the overall semiconductor manufacturing process and increase its efficiency. In other words, the temperature of the workpiece may be modulated rather than varying the time used to process certain regions of the workpiece. This can achieve the same result as increasing the time without reducing efficiency.

[0019] One mechanism for changing the temperature of the workpiece may be to control the ability of the workpiece to dissipate heat to the platen. For example, the backside gas is typically located in a small volume between the backside of the workpiece and the platen. The pressure of this backside gas determines the amount of heat transfer achieved between the workpiece ...

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Abstract

A system and method for modulating and controlling the local temperature of a workpiece during machining is disclosed. The system uses a deck having one or more walls that define a plurality of discrete regions on the top surface of the deck. When a workpiece is seated on the platen, a plurality of compartments are formed, wherein each compartment is bounded by the back side of the workpiece and a corresponding region of the platen. The pressure of the back gas within each of the compartments can be controlled individually. The pressure of the backside gas determines the amount of heat transferred from the workpiece to the platen. By locally adjusting the pressure of the backside gas, different regions of the workpiece can be maintained at different temperatures. In certain embodiments, multiple valves are used to control the flow rate to the compartment.

Description

technical field [0001] Embodiments of the present disclosure relate to systems and methods for controlling the temperature of a workpiece during processing, and more particularly, to systems and methods that utilize changes in backside gas flow to locally control the temperature of the workpiece. Background technique [0002] The manufacture of semiconductor components involves several discrete and complex processes. One such process may be an etch process that removes material from the workpiece. Another process may be a deposition process that deposits material on the workpiece. Yet another process may be an ion implantation process in which ions are implanted into the workpiece. [0003] Additionally, in some embodiments, certain processes within the overall semiconductor manufacturing process may have non-uniformities. For example, certain processes, such as chemical mechanical planarization (CMP), may grind a workpiece in a non-uniform manner such that more material ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCH01L21/67109H01L21/67248G05B19/418H01L21/67017G05B2219/31001G05B2219/45031
Inventor 朱利安·G·布雷克
Owner VARIAN SEMICON EQUIP ASSOC INC