Quantum dot electroluminescent device and display

An electroluminescent device and quantum dot technology, applied in the field of quantum dots, can solve the problems of different transmission rates between electrons and holes, positive load carrier imbalance, etc., and achieve the goals of reducing space charge accumulation, good current efficiency, and improving efficiency Effect

Inactive Publication Date: 2018-12-07
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With this multilayer structure, the transport rates of electrons and holes are different, resulting in an imbalance of positive charge carriers

Method used

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  • Quantum dot electroluminescent device and display
  • Quantum dot electroluminescent device and display
  • Quantum dot electroluminescent device and display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] This embodiment provides a quantum dot electroluminescent device with a structure such as figure 1 As shown, the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, the first electron transport layer 105, the second electron transport layer 106 and the second electrode layer 107;

[0052] The material of the first electron transport layer 105 is ZnO; the material of the second electron transport layer 106 is TmPyPB:LiQ.

[0053] The preparation process of the quantum dot electroluminescent device of the present embodiment is as follows:

[0054] (1) The glass substrate containing the ITO (120nm) transparent electrode was cleaned with deionized water and isopropanol and continuously ultrasonicated for 25 minutes, then dried with a nitrogen gun, and treated under UV-O for 20 minutes to clean The surface of ITO, and improve the work function of ITO;

[0055] (2) Deposit a hole injection ...

Embodiment 2

[0062] This embodiment provides a quantum dot electroluminescent device, in which a substrate 100, a first electrode layer 101, a hole injection layer 102, a hole transport layer 103, a light emitting layer 104, and a first electron transport layer 105 are sequentially stacked from bottom to top , the second electron transport layer 106 and the second electrode layer 107;

[0063] The material of the first electron transport layer 105 is MgO; the material of the second electron transport layer 106 is TmPyPB:LiQ.

[0064] The preparation process of the quantum dot electroluminescent device of the present embodiment is as follows:

[0065] (1) The glass substrate containing the ITO (120nm) transparent electrode was cleaned with deionized water and isopropanol and continuously ultrasonicated for 25 minutes, then dried with a nitrogen gun, and treated under UV-O for 20 minutes to clean The surface of ITO, and improve the work function of ITO;

[0066] (2) Deposit a hole injectio...

Embodiment 3

[0073] This embodiment provides a quantum dot electroluminescent device, in which a substrate 100, a first electrode layer 101, a hole injection layer 102, a hole transport layer 103, a light emitting layer 104, and a first electron transport layer 105 are sequentially stacked from bottom to top , the second electron transport layer 106 and the second electrode layer 107;

[0074] The material of the first electron transport layer 105 is TiO 2 ; The material of the second electron transport layer 106 is Bphen:LiQ.

[0075] The preparation process of the quantum dot electroluminescent device of the present embodiment is as follows:

[0076] (1) The glass substrate containing the ITO (120nm) transparent electrode was cleaned with deionized water and isopropanol and continuously ultrasonicated for 25 minutes, then dried with a nitrogen gun, and treated under UV-O for 20 minutes to clean The surface of ITO, and improve the work function of ITO;

[0077] (2) Deposit a hole injec...

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Abstract

The present invention relates to a quantum dot electroluminescent device. The quantum dot electroluminescent device comprises a first electrode layer, a luminescent layer and a second electrode layerwhich are stacked in order; a first electron transfer layer and a second electron transfer layer are arranged between the luminescent layer and the second electrode layer; the materials of the first electron transfer layer comprise inorganic metallic oxide transmission materials, and the materials of the second electron transfer layer comprise organic electron transport materials. The electron transfer layers with two different materials are used in a stack mode to weaken the difference of the hole mobility and the electronic mobility, achieve the carrier balance and greatly improve the current efficiency, and can be applied to the fields of solid-state lighting and panel display.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to quantum dot electroluminescent devices and displays. Background technique [0002] Quantum dots are nanometer-sized semiconductor materials with quantum confinement effects. When excited by light or electricity, quantum dots will emit very pure light, which has the characteristics of high luminous quantum efficiency and stable performance. Quantum Dot Light Emitting Diode (QLED) devices fabricated by utilizing the electroluminescent properties of quantum dots, as an emerging light-emitting device, have received extensive attention in recent years. Compared with traditional organic light-emitting diodes (OLEDs), QLEDs have more excellent color purity, brightness and viewing angles. The quantum dot light-emitting diodes with quantum dot materials as the light-emitting layer have broad application prospects in the fields of solid-state lighting, flat panel display, etc., and have attrac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K50/115H10K50/165H10K50/166
Inventor 魏雄伟李哲谢相伟黄航宋晶尧
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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