Cadmium stannate-based transparent conductive film, production process thereof and solar cell

A technology of transparent conductive film and production process, applied in the field of solar cells, can solve the problems of increasing the production cost of the film material, increasing the difficulty, contaminating the CTO film layer, etc.

Active Publication Date: 2018-12-18
ADVANCED SOLAR POWER HANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this preparation process, during annealing, it is necessary to perform face-to-face annealing of the CdS film and the CTO film on the substrate. When there is a problem with the flatness of the substrate surface, it is easy to cause unevenness of the CTO film; It is not suitable for large-scale automated assembly line technology. Even if an additional mechanical structure is designed to assist the annealing of the membrane surface, it will greatly increase the difficulty of industrialized large-scale automated production.
In addition, the CdS film layer is used many times, which is easy to contaminate impurities, thereby further contaminating the CTO film layer, making the performance of the CTO less than the expected effect, and bringing uncontrollable factors to the stability of the process; in addition, annealing often requires ℃ or even higher temperature, which exceeds the softening temperature of ordinary glass substrates, and requires the use of special high-temperature-resistant substrates. This annealing method greatly increases the production cost of the film material and limits industrial scale production.
Therefore, in the prior art, CTO membranes can only be prepared and researched in the laboratory, but it is difficult to achieve large-scale industrial production.

Method used

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  • Cadmium stannate-based transparent conductive film, production process thereof and solar cell
  • Cadmium stannate-based transparent conductive film, production process thereof and solar cell
  • Cadmium stannate-based transparent conductive film, production process thereof and solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] 1.1 Preparation of cadmium stannate-based transparent conductive film (CTO-CdS):

[0068] (1)a. With SnO 2 -CdO as the target (SnO 2 The molar ratio to CdO is 33:67), the glass substrate is placed in the magnetron sputtering chamber, and the sputtering distance between the target and the substrate is adjusted to be 6.7cm;

[0069] b. Vacuum the sputtering chamber until the vacuum degree is ≤2.5E-6Torr;

[0070] c. Introduce gas (Ar and O) into the sputtering chamber 2 ), Ar flow is 72sccm, O 2 The flow rate is 8sccm, so that the air pressure in the sputtering chamber is kept at 10mTorr;

[0071] d. Using radio frequency sputtering, the sputtering power is 484W, the radio frequency is 13.56MHz, and the sputtering is 9.5min, and the precursor CTO base film is deposited on the glass substrate (denoted as 1-0#);

[0072] e. Replace the target material and use CdS as the target material;

[0073] f. Vacuum the sputtering chamber to a vacuum degree ≤2.5E-6Torr;

[0074] ...

Embodiment 2

[0092] 1.1 Preparation of cadmium stannate-based transparent conductive film (CTO-Al):

[0093] (1)a. With SnO 2 -CdO as the target (SnO 2 The molar ratio to CdO is 33:67), the glass substrate is placed in the magnetron sputtering chamber, and the sputtering distance between the target and the substrate is adjusted to be 6.7cm;

[0094] b. Vacuum the sputtering chamber until the vacuum degree is ≤2.5E-6Torr;

[0095] c. Introduce gas (Ar and O) into the sputtering chamber 2 ), Ar flow is 72sccm, O 2 The flow rate is 8sccm, so that the air pressure in the sputtering chamber is kept at 10mTorr;

[0096] d. Using radio frequency sputtering, the sputtering power is 485W, the radio frequency is 13.56MHz, and the sputtering is 9.5min, and the precursor CTO base film is deposited on the glass substrate (denoted as 2-0#);

[0097] e. Replace the target material and use the Al target as the target material;

[0098] f. Vacuum the sputtering chamber to a vacuum degree ≤ 1.5E-4Pa; ...

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Abstract

The present application provides a cadmium stannate-based transparent conductive film, production process thereof and solar cell. In the production process of the present application, first a target material is subjected to magnetron sputtering in an oxygen-containing gas environment, then a transition film layer is composited, and is then annealed in a protective atmosphere. The preparation method according to the invention can be directly annealed in a protective atmosphere without a close-to-annealing mode, thus greatly simplifying the annealing process and realizing industrialized large-scale production. The invention also provides a cadmium stannate-based transparent conductive film and a solar cell comprising the cadmium stannate-based transparent conductive film, wherein the electric and optical properties of the cadmium stannate-based transparent conductive film provided by the invention are obviously improved compared with an existing commercial TCO film.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a cadmium stannate-based transparent conductive film, its production process and a solar cell. Background technique [0002] Cadmium telluride (CdTe) thin-film solar cell is a commercial high-efficiency solar cell, and its conventional structure is as follows: figure 1 As shown, it includes substrate glass-TCO transparent conductive film-window layer-CdTe absorption layer-transition layer-metal contact electrode, wherein the TCO transparent conductive film is the front electrode of the solar cell, and its function is to generate Carriers can be collected effectively while reducing the energy loss caused by its own resistance. Since the conventional cadmium telluride solar cell is a light-incoming structure, in order to improve the utilization rate of sunlight, more light needs to enter the semiconductor absorption layer and convert it into electron-hole pairs, thereby conver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022425H01L31/022466H01L31/1884Y02E10/50Y02P70/50
Inventor 周洁吴历清吴选之
Owner ADVANCED SOLAR POWER HANGZHOU
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