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Semiconductor device and manufacturing method thereof

A semiconductor and component technology, applied in the field of making dynamic random access memory components

Active Publication Date: 2019-01-25
UNITED MICROELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by the manufacturing process technology, there are still many defects in the existing DRAM cells with recessed gate structures, which need to be further improved to effectively improve the performance and reliability of related memory components

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0022] Please refer to Figure 1 to Figure 9 , Figure 1 to Figure 9 A schematic diagram of a method for making a dynamic random access memory element in a preferred embodiment of the present invention, wherein figure 1 for top view, figure 2 show figure 1 A cross-sectional view of making a DRAM element along the tangent line AA' in Figure 3 to Figure 9 The left half of is the continuation of figure 2 crafting and along figure 1 A schematic cross-sectional view of the tangent line AA', Figure 3 to Figure 9 The right half of is the continuation figure 2 crafting and along figure 1 A cross-sectional view of a dynamic random access memory element is made in the direction of tangent line BB'. Overall, this embodiment provides a memory device, such as a DRAM device 10 with a recessed gate, which includes at least one transistor element (not shown in the figure) and at least one capacitor structure (not shown in the figure) (shown) to serve as the smallest unit in th...

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PUM

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The method of fabricating the semiconductor device comprises the following steps of: At first, a first groove is formed in a substrate, A lower surface of that third groove is lower than the lower surface of the second groove. The first groove is isolated from the first groove to form a first patterned mask on the substrate. The first groove is partially removed from the first groove by the first patterned mask to form a second groove.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) element. Background technique [0002] With the trend of miniaturization of various electronic products, the design of dynamic random access memory (DRAM) cells must also meet the requirements of high integration and high density. For a DRAM cell with a recessed gate structure, since it can obtain a longer carrier channel length in the same semiconductor substrate to reduce the leakage of the capacitor structure, it is under the current mainstream development trend , which has gradually replaced DRAM cells with only planar gate structures. [0003] Generally, a DRAM cell with a recessed gate structure includes a transistor element and a charge storage device for receiving voltage signals from bit lines and word lines. However, due to the limitation of manufacturing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/01H10B12/00H01L21/76224H10B12/34H10B12/053H10B12/488H01L29/0649
Inventor 张峰溢李甫哲
Owner UNITED MICROELECTRONICS CORP