Flash memory data writing method, device and computer-readable storage medium

A data writing and data technology, which is applied in the input/output process of data processing, calculation, electrical digital data processing, etc.

Active Publication Date: 2022-02-22
SLICONGO MICROELECTRONICS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a flash memory data writing method, device and computer-readable storage medium, aiming to solve the problem that the data error rate increases when the flash memory writes data outside the normal working temperature range

Method used

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  • Flash memory data writing method, device and computer-readable storage medium
  • Flash memory data writing method, device and computer-readable storage medium
  • Flash memory data writing method, device and computer-readable storage medium

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no. 1 example

[0064] refer to figure 2 , figure 2 For the first embodiment of the writing method of flash memory data of the present invention, the writing method of described flash memory data comprises:

[0065] Step S10, after receiving the data writing instruction, obtain the temperature value of the current environment;

[0066] The method for writing flash memory data provided by the present invention is mainly used to reduce the error rate of writing flash memory data when the temperature is not within the normal working range. The terminals involved in the flash memory data writing method provided by the present invention include but are not limited to mobile phones, tablet computers, computers, etc., and relevant application systems are pre-loaded on the terminals.

[0067] In the technical solution provided by this embodiment, there are various types or manufacturers of flash memory currently on the market, and different types of flash memory have different degrees of sensitiv...

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PUM

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Abstract

The invention discloses a flash memory data writing method, device and computer-readable storage medium, comprising the following steps: after receiving a data writing instruction, acquiring the temperature value of the current environment; when the temperature value is not within the preset range When it is inside, write the data into the first storage area, wherein the first storage area adopts SLC programming mode to store data, and write 1Bit data each time when writing the data; when the temperature value is restored When it is within the preset range, the data in the first storage area is acquired and written into the second storage area, wherein the second storage area adopts a storage mode other than the SLC programming mode. Because the present invention can judge whether the operating temperature is within the normal range before writing data, when the temperature is not within the normal range, the data is written into the single-level storage unit, thereby solving the problem of writing data outside the normal working temperature range of the flash memory. The problem of increased data error rate.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a flash memory data writing method, device and computer-readable storage medium. Background technique [0002] In recent years, with the development of science and technology, various automated instruments and equipment have appeared in various industrial workshops and some harsh exploration environments. In order to meet the requirements of high intelligence, these instruments and equipment will generate a large number of data and use NAND flash memory for storage. [0003] However, in many cases, the environment where NAND flash memory is located is not so comfortable. For equipment working in complex industrial and exploration environments, the data stability of the equipment containing NAND flash memory is a huge test. Especially when the external environment temperature is too high or too low, the error rate will be greatly increased when writing data in the NAND flash memory. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F11/30
CPCG06F3/0622G06F3/0679G06F11/3058
Inventor 胡小均吴大畏李晓强黄慧
Owner SLICONGO MICROELECTRONICS INC
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