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Flash memory data writing method and device and computer readable storage medium

A data writing and data technology, applied in the input/output process of data processing, calculation, electrical digital data processing, etc., can solve the problem of increased data error rate

Active Publication Date: 2019-04-05
SLICONGO MICROELECTRONICS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a flash memory data writing method, device and computer-readable storage medium, aiming to solve the problem that the data error rate increases when the flash memory writes data outside the normal working temperature range

Method used

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  • Flash memory data writing method and device and computer readable storage medium
  • Flash memory data writing method and device and computer readable storage medium
  • Flash memory data writing method and device and computer readable storage medium

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no. 1 example

[0064] refer to figure 2 , figure 2 For the first embodiment of the writing method of flash memory data of the present invention, the writing method of described flash memory data comprises:

[0065] Step S10, after receiving the data writing instruction, obtain the temperature value of the current environment;

[0066] The method for writing flash memory data provided by the present invention is mainly used to reduce the error rate of writing flash memory data when the temperature is not within the normal working range. The terminals involved in the flash memory data writing method provided by the present invention include but are not limited to mobile phones, tablet computers, computers, etc., and relevant application systems are pre-loaded on the terminals.

[0067] In the technical solution provided by this embodiment, there are various types or manufacturers of flash memory currently on the market, and different types of flash memory have different degrees of sensitiv...

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Abstract

The invention discloses a flash memory data writing method and device and a computer readable storage medium, and the method comprises the following steps: obtaining a temperature value of a current environment after receiving a data writing instruction; When the temperature value is not in the preset range, writing the data into a first storage area, storing the data in the first storage area byadopting an SLC programming mode, and writing 1Bit data every time when the data is written; And when the temperature value is recovered to a preset range, obtaining data in the first storage area andwriting the data into a second storage area, the second storage area adopting other storage modes except an SLC programming mode. Due to the fact that whether the working temperature is within the normal range or not can be judged before the data are written in, when the temperature is not within the normal range, the data are written in the single-order storage unit, and the problem that the data error rate is increased when the data are written out of the normal working temperature range is solved.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a flash memory data writing method, device and computer-readable storage medium. Background technique [0002] In recent years, with the development of science and technology, various automated instruments and equipment have appeared in various industrial workshops and some harsh exploration environments. In order to meet the requirements of high intelligence, these instruments and equipment will generate a large number of data and use NAND flash memory for storage. [0003] However, in many cases, the environment where NAND flash memory is located is not so comfortable. For equipment working in complex industrial and exploration environments, the data stability of the equipment containing NAND flash memory is a huge test. Especially when the external environment temperature is too high or too low, the error rate will be greatly increased when writing data in the NAND flash memory. ...

Claims

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Application Information

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IPC IPC(8): G06F3/06G06F11/30
CPCG06F3/0622G06F3/0679G06F11/3058
Inventor 胡小均吴大畏李晓强黄慧
Owner SLICONGO MICROELECTRONICS INC
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