A kind of three-dimensional memory and its preparation method

A memory, three-dimensional technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of difficult charge retention and reduce the retention characteristics of three-dimensional memory, so as to reduce the phenomenon of scattering, improve the storage retention characteristics, and avoid electron migration. effect of the phenomenon

Active Publication Date: 2021-02-26
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In this way, it is difficult for the charge to be kept in the storage layer area corresponding to each storage unit, which greatly reduces the retention characteristics of the three-dimensional memory.

Method used

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  • A kind of three-dimensional memory and its preparation method
  • A kind of three-dimensional memory and its preparation method
  • A kind of three-dimensional memory and its preparation method

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Embodiment Construction

[0055] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that the present invention can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art.

[0056] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described; that is, a...

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Abstract

The invention discloses a three-dimensional memory and a preparation method thereof. Wherein, the three-dimensional memory includes: a gate stack, including a plurality of gates arranged at intervals; a channel structure passing through the gate stack, and the channel structure includes a storage layer, and the storage layer includes several Storage regions isolated from each other; at least one of the storage regions overlaps with at least one of the gates in the radial direction of the channel structure.

Description

technical field [0001] The invention relates to the technical field of memory devices, in particular to a three-dimensional memory and a preparation method thereof. Background technique [0002] Memory is a memory device used to save information in modern information technology. With the continuous improvement of the demand for integration and data storage density of various electronic devices, it is increasingly difficult for ordinary two-dimensional memory devices to meet the requirements. In this case, three-dimensional (3D) memory emerges as the times require. [0003] In a three-dimensional memory, the storage layer plays a role in controlling the charge storage of the memory, and is the key structure for the device to complete the storage function. At present, the storage layer is generally formed by depositing a layer of high-K dielectric layer in the channel hole (CH) of the three-dimensional memory; the storage layer extends along the axial direction of the channel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11582H01L21/28
CPCH01L29/40117H10B43/27
Inventor 王启光
Owner YANGTZE MEMORY TECH CO LTD
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