Static random access memory control circuit

A static random access and control circuit technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of insufficient control accuracy, high manufacturing cost of SRAM, and large area occupation

Active Publication Date: 2019-07-05
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the commonly used SRAM control circuit is generally formed by writing a hardware description language (such as Verilog code), which only accepts digital signal control, and the control accuracy is insufficient; and it often needs to occupy a large area, resulting in high manufacturing cost of SRAM

Method used

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Embodiment Construction

[0032] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.

[0033] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...

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PUM

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Abstract

The invention discloses a static random access memory control circuit. The control circuit is used for generating an output signal for controlling the static random access memory to work according tothe input signal, wherein the input signal at least comprises a bit line potential analog signal, and the control circuit comprises a bit line potential analog signal detection module which is used for generating an analog signal detection flag bit according to the change of the input bit line potential analog signal, wherein the analog signal detection flag bit is used for controlling the generation and / or reset time of the output signal working in the static random access memory.

Description

technical field [0001] The invention relates to the technical field of memory devices, in particular to a static random access memory control circuit. Background technique [0002] Static Random-Access Memory (SRAM) is often used in computer systems to temporarily store data. The so-called "static" means that as long as this kind of memory continues to have power supply, the data stored in each storage unit can be kept constantly. SRAM can generally be divided into five parts: memory cell array, row / column address decoder, sense amplifier, buffer / drive circuit and control circuit; among them, the control circuit is mainly used to control the start, reset and shutdown of SRAM, which can include Control the power supply switching time of the word line / bit line, control the charging / precharging time, etc. [0003] At present, commonly used SRAM control circuits are generally formed by writing hardware description languages ​​(such as Verilog codes), which only accept digital ...

Claims

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Application Information

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IPC IPC(8): G11C11/413
CPCG11C11/413
Inventor 王礼维
Owner YANGTZE MEMORY TECH CO LTD
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