Control device for ion implantation in wafer production

A technology for ion implantation and control devices, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., and can solve problems such as scattered ion output, damage to the output port, and difficulty in direct irradiation

Active Publication Date: 2019-09-10
ANHUI XINDALU SPECIAL PAINT CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the above-mentioned technology has a certain degree of heat due to the direct ion implantation, when the output port is output through the focused ou

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Control device for ion implantation in wafer production
  • Control device for ion implantation in wafer production
  • Control device for ion implantation in wafer production

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0030] as attached figure 1 to attach Figure 8 Shown:

[0031] The invention provides a control device for ion implantation in wafer production, the structure of which includes a movable channel 1 , a connecting operation head 2 , an ion calibration output port 3 , and a guard ring 4 .

[0032] The movable channel 1 is installed inside the connecting operation head 2, the bottom end of the connecting operation head 2 is connected to the top end of the ion calibration output port 3, and the guard ring 4 is nested on the outer surface of the ion calibration output port 3 and is located on the same axis. heart.

[0033] The ion proofreading output port 3 includes a proofreading mouth rod 31, a direct shot path 32, a complete buckle 33, a flexible pressure ball 34, an integral capsule 35, a partition 36, and a directional ejector rod 37, and the proofreading mouth rod 31 is located at the straight shot path 32 On the left and right sides, the complete buckle 33 and the partiti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a control device for ion implantation in wafer production, which comprises a movable channel, a connecting operation head, an ion calibration outlet and a retaining ring. The movable channel is installed inside the connecting operation head. The ion calibration outlet includes a calibration outlet rod, a direct channel, a complete buckle, a flexible pressure ball, an integral bag, an interlayer and directed ejector rods. When the ion implantation inlet is damaged, the ion implantation inlet will fall, a main rod will slide downward, a boomerang will be propped open by space force, and a lubricating layer will help the corners to slide to the two sides. When the boomerang is propped open, a bending limit rod will be extruded, positioning will be carried out between aclamp hook and a fixing column, a top shell will push the integral bag, and the external pressure arc inside the integral bag will be stressed and abutted against the surface of a new main rod to fixthe new main rod. When the direct opening of ion calibration is damaged, a new opening can be backed up in time to prevent mistakes in the operation process. The damaged opening is repaired after theoperation.

Description

technical field [0001] The invention belongs to the field of semiconductors, and more specifically relates to a control device for ion implantation used in wafer production. Background technique [0002] There is a step in the process of wafer production that requires ion implantation. After the ions are accelerated internally, they are located in the vertical direction and pass through the corresponding position of the output port. They are directly irradiated on the surface of the wafer. Ions will generate a certain amount of heat in the process of accelerating direct radiation. [0003] Based on the above inventors' discovery, the existing ion implantation control device for wafer production mainly has the following deficiencies, such as: [0004] Because there is a certain amount of heat in direct ion implantation, when the output port is output quickly through the focus for a long time, the output port will be damaged, which will easily cause the ions to scatter during...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01J37/30H01J37/317H01L21/67
CPCH01J37/3002H01J37/3171H01J2237/31701H01L21/67011
Inventor 祁金发
Owner ANHUI XINDALU SPECIAL PAINT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap