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Systems and methods for plasma filtering

A plasma and semiconductor technology, applied in the field of semiconductor systems, which can solve problems such as damage to the substrate

Pending Publication Date: 2019-12-13
APPLIED MATERIALS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, localized plasmas can damage substrates by creating arcs that, due to arcing

Method used

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  • Systems and methods for plasma filtering
  • Systems and methods for plasma filtering
  • Systems and methods for plasma filtering

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Embodiment Construction

[0021] The technology includes systems and components for semiconductor processing of fine pitch features. As line spacing decreases, standard lithographic processes may be limited and alternative mechanisms may be used in patterning. Conventional techniques have focused on these minimal patterning and removal operations, especially when the exposed material on the substrate can include numerous different features and materials, some to be etched away and some to remain.

[0022] Atomic layer etching is a method that utilizes a multi-operation process that destroys or modifies the surface of a material followed by an etching operation. Etching operations can be performed under chamber conditions that allow removal of modified material but limit interaction with unmodified material. This method can then be cycled any number of times to etch additional material. Some chambers available can perform both operations within a single chamber. The modification can be performed usin...

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Abstract

The disclosure relates to systems and methods for plasma filtering. Systems and methods may be used to enact plasma filtering. Exemplary processing chambers may include a showerhead. The processing chambers may include a substrate support. The processing chambers may include a power source electrically coupled with the substrate support and configured to provide power to the substrate support to produce a bias plasma within a processing region defined between the showerhead and the substrate support. The processing systems may include a plasma screen coupled with the substrate support and configured to substantially eliminate plasma leakage through the plasmascreen. The plasma screen may be coupled with electrical ground.

Description

[0001] This application is a divisional application of a Chinese patent application with the filing date of October 24, 2018, the application number 201811245601.3, and the title "System and Method for Plasma Filtration". technical field [0002] The technology relates to semiconductor systems, methods and devices. More specifically, the present technology relates to systems and methods for filtering plasma within processing chambers. Background technique [0003] Integrated circuits may be fabricated by processes that produce intricately patterned layers of material on the surface of a substrate. Generating patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for a variety of purposes, including transferring the pattern in the photoresist to underlying layers, thinning layers, or thinning the lateral dimensions of features already present on the surface. It is often desirable to have an etch process that et...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/455C23C16/505H01L21/67H01L21/687H01L21/683
CPCC23C16/4404C23C16/45565C23C16/505H01L21/67167H01L21/6719H01L21/68735H01L21/6831H01J37/32091H01J37/3244H01J37/32651H01J37/32706H01J37/32513H01L21/3065H01L21/67184H01L21/02274H01L21/67748H01L21/67069H01J37/00
Inventor S·朴T·Q·特兰N·卡尔宁D·卢博米尔斯基A·德瓦拉孔达
Owner APPLIED MATERIALS INC
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