Systems and methods for plasma filtering

Abstract

The disclosure relates to systems and methods for plasma filtering. Systems and methods may be used to enact plasma filtering. Exemplary processing chambers may include a showerhead. The processing chambers may include a substrate support. The processing chambers may include a power source electrically coupled with the substrate support and configured to provide power to the substrate support to produce a bias plasma within a processing region defined between the showerhead and the substrate support. The processing systems may include a plasma screen coupled with the substrate support and configured to substantially eliminate plasma leakage through the plasmascreen. The plasma screen may be coupled with electrical ground.

Description

[0001] This application is a divisional application of a Chinese patent application with the filing date of October 24, 2018, the application number 201811245601.3, and the title "System and Method for Plasma Filtration". technical field

[0002] The technology relates to semiconductor systems, methods and devices. More specifically, the present technology relates to systems and methods for filtering plasma within processing chambers. Background technique

[0003] Integrated circuits may be fabricated by processes that produce intricately patterned layers of material on the surface of a substrate. Generating patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for a variety of purposes, including transferring the pattern in the photoresist to underlying layers, thinning layers, or thinning the lateral dimensions of features already present on the surface. It is often desirable to have an etch process that et...

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