Integrated Doherty amplifier and combiner thereof

Abstract

The invention discloses an integrated Doherty amplifier and a combiner thereof, and the combiner comprises a main parallel inductor, one end of which is connected in parallel with the output end of amain amplifier; a peak parallel inductor of which one end is connected to the output end of the peak amplifier in parallel; a series capacitor which is connected in series between the output end of the main amplifier and the output end of the peak amplifier; the main parallel inductor and the peak parallel inductor are configured to be used for adjusting the output capacitance of the main amplifier and the output capacitance of the peak amplifier respectively and form an impedance converter with the series capacitor. The integrated Doherty amplifier is used at relatively low power, and meanwhile, high broadband, high efficiency and miniaturization of the amplifier are realized.

Description

technical field [0001] The invention belongs to the technical field of Doherty radio frequency power amplifiers, and in particular relates to an integrated Doherty amplifier and a combiner thereof. Background technique [0002] exist figure 1 An example of a Doherty amplifier is given in . refer to figure 1 As shown, a Doherty amplifier consists of a main or carrier amplifier M and one or more peaking amplifiers P. A Doherty amplifier also includes a Doherty power divider 1 and a Doherty combiner 2, and the Doherty power divider 1 is used to separate the amplified radio frequency signal RF in , for the main amplifier M and the peaking amplifier P. The Doherty combiner 2 is used to combine the signals amplified by the main amplifier M and the peak amplifier P at the combining node C. The latter node C is usually connected to the load Z through an impedance transformation network L . exist figure 1 In the impedance transformation network, a characteristic impedance is ...

AI Technical Summary

Problems solved by technology

[0010] The first issue has to do with the Q-factor of the integrated Doherty combiner, which determines at least in part the power-added efficiency of the Doherty amplifier

Due to the very low Q factor value associated with the conductive substrate of the semiconductor wafer, large inductors cannot be integrated on the semiconductor wafer. On the other hand, it is very difficult to achieve high inductance values ​​using bonding wires.

[0011] The second question is about the capacitance value required by the C-L-CП type network, and more specifically the required capacitance value C is smaller than the actual output capacitance of the main amplifier and the peak amplifier.

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