MOSFET wafer adjacent particle test method and test circuit thereof

A test method and test circuit technology, applied in the direction of measuring electricity, measuring electrical variables, and single semiconductor device testing, etc., can solve problems such as bad die, decline in yield, and inability to test particles under test, so as to reduce test errors and improve The effect of measurement accuracy

Pending Publication Date: 2020-06-26
赛英特半导体技术(西安)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Most of the current test schemes are to improve the flatness of the slide table by plating a thick gold layer on the slide table, and reduce the impact caused by uneven contact. However, the cost of the probe station is greatly increased in this way. Particle method, but the traditional adjacent particle method has a serious problem, that is, when the auxiliary particle used to implement the adjacent particle method is a bad die, the measured particle cannot be tested, and the system will directly judge this particle as Failed die, resulting in a drop in yield

Method used

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  • MOSFET wafer adjacent particle test method and test circuit thereof
  • MOSFET wafer adjacent particle test method and test circuit thereof
  • MOSFET wafer adjacent particle test method and test circuit thereof

Examples

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Embodiment 1

[0022] Such as figure 1 As shown, a method for testing particles adjacent to a MOSFET wafer and a test circuit thereof in this embodiment, the test method includes the following steps: S101, connecting the drain loading end of the MOSFET wafer to the drain measurement end through a resistor; S102, By testing the VTH small current parameter, it is judged that the basic functions of the N tested MOSFET particles are normal; S103, testing Rdson (on resistance), selects the particle with normal function and the closest distance to the measured particle as the auxiliary particle; S104, the grid of the auxiliary particle The pole drive is in the normally-on state; S105, connect the measurement terminal of the common drain to the source of the auxiliary particle, and then perform Rdson (on resistance) parameter test.

[0023] The number of the N particles to be tested is consistent with the number of circuit arms of the test station, and the greater the value of N, the lower the test...

Embodiment 2

[0028] Such as figure 2 As shown, a kind of MOSFET wafer test method and test circuit thereof of the embodiment are used for testing the Rdson (on-resistance) test parameter of MOSFET wafer, including test module, MOSFET, switch, stage;

[0029] The gate of the MOSFET is connected to the sampling port and the output port of the test module A port, and the source of the MOSFET is connected to the sampling port and the output port of the test sampling module C port;

[0030] The test module B port of the station is connected to the common drain of the MOSFET under test through a switch;

[0031] The MOSFET wafer under test is placed on the stage;

[0032] The method of taking the 4SITE parallel test as an example to illustrate the MOSFET wafer adjacent particle test parameter Rdson (conduction resistance):

[0033] S201: When the measured particle is Die1, close the switch K3 and use Die2 as the adjacent particle;

[0034] S202: Apply a current I to the loading end of the B ...

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Abstract

The invention discloses an MOSFET wafer adjacent particle test method and a test circuit thereof. The test method comprises the following steps of S101, connecting a drain electrode loading end and adrain electrode measurement end of an MOSFET wafer through a resistor; S102, judging that the basic functions of the N tested MOSFET particles are normal by testing VTH small current parameters; S103,testing Rdson, and selecting particles which have a normal function and are closest to the tested particles as auxiliary particles; S104, driving the grid electrodes of the auxiliary particles to bein a normally-on state; S105, connecting the measurement end of the common drain electrode to the source electrode of the auxiliary particles, and then performing Rdson parameter test; correspondingly, the invention also discloses a MOSFET wafer adjacent particle test circuit, which can improve the measurement precision of the Rdson parameter of the MOSFET wafer and effectively reduce the test error.

Description

technical field [0001] The invention relates to the technical field of discrete device testing, in particular to a method for testing particles adjacent to a MOSFET wafer and a testing circuit thereof. Background technique [0002] The drain measurement terminal of the MOSFET is connected to the stage, even if the internal resistance of the stage is very low, the error can be ignored, and the equivalent resistance on the drain substrate current path will be added to the measured device Rdson (lead On the value of on-resistance), the drain loop is no longer a standard Kelvin connection, which causes a lot of measurement errors. This measurement error is unstable. When the bottom of the measured particle is in good contact, the error is very small. When the bottom of the measured particle and nearby particles are not in good contact, the error is relatively large. [0003] In order to reduce the error, it is necessary to make the wafer and the CHUNK table fit as tightly as po...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G01R31/26G01R27/14
CPCG01R27/14G01R31/2601G01R31/2621
Inventor王煜
Owner赛英特半导体技术(西安)有限公司