Method for calculating resistivity of residual materials in continuous drawing single crystal rod pot

Abstract

The invention provides a method for calculating the resistivity of residual materials in A continuous drawing single crystal rod pot. The electrical resistivity of the residual materials in the pot iscalculated by utilizing a formula: electrical resistivity of the remaining materials in the pot is equal to head calculation electrical resistivity *(1-B/A)(1-segregation coefficient)*segregation coefficient*a. No matter whether the crystal bar is fed after reaching the ending length or is fed after being lifted out due to equal-diameter failure; the resistivity of the materials in the pot can beaccurately calculated, then the residual weight in the pot and the resistivity of the materials are input into the doping agent calculation table and returned to the material melting column, the dosage of the doping agent is calculated, and it can be guaranteed that the resistivity of second rod, third rod,..., and the like is close to that of first rod according to the method.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon production by the Czochralski method, in particular to a method for calculating the resistivity of the remaining material in a pot after continuously pulling a single crystal rod. Background technique [0002] When pulling multi-rod monocrystalline silicon, the existing pulling method is to fix the length of crystal rods such as 1 rod, 2 rods, 3 rods, etc., and estimate 1 rod, 2 rods, and 3 rods according to a diameter ... Wait for the weight of the ingot, calculate the weight of the remaining material in the crucible according to the estimated weight of the ingot, and then calculate the resistivity of the remaining material in the crucible according to the segregation phenomenon, that is, the remaining material in the crucible according to this method. The material resistivity of 1 rod is the same value, and the value of 2 rods is the same value. In this way, when the diameter of ...

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Problems solved by technology

[0002] When pulling multi-rod monocrystalline silicon, the existing pulling method is to fix the length of crystal rods such as 1 rod, 2 rods, 3 rods, etc., and estimate 1 rod, 2 rods, and 3 rods according to a diameter ... Wait for the weight of the ingot, calculate the weight of the remaining material in the crucible according to the estimated weight of the ingot, and then calculate the resistivity of the remaining material in the crucible according to the segregation phenomenon, that is, the remaining material in the crucible according to this method. The material resistivity of 1 rod is the same value, and the value of 2 rods is the same value. In this way, when the diameter of each furnace differs greatly during calculation, the weight of the material in the remaining crucible will vary greatly, which will cause a large deviation in the resistivity estimate.

[0003] If the segregation coefficient is large, or the resistivity requirement of the ingot is small, such as boron-doped single crystal, the resistivity is less than 10Ω.cm, and the calculation according to this method has little effect on the resistivity of the subsequent rods, and can even be used directly Calculate the dopant dose by the weight of the added material, and ignore the resistance furnace of the remaining material in the crucible, which will not cause too many tails to be scrapped due to low resistivity; but if the segregation coefficient is small, or the resistivity of the ingot is required to be high , such as phosphorus-doped, high-resistance single crystal (resistivity may reach 100), when pulling this type of single crystal, the relatively accurate resistivity of the remaining material in the crucible is not known, but it is estimated according to the estimate, which may easily cause the resistivity of the head Too low will cause the tail to be scrapped or the resistivity of the head is too high, and the head will be scrapped, which will affect the yield and increase the production cost

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