Command monitoring method and device, controller, system, equipment and storage medium

Abstract

The invention provides a command monitoring method and device, a controller, a system, equipment and a storage medium, and the method comprises the steps: obtaining the first address information of a target storage unit array specified by an activation command and the current configuration information of all storage unit arrays in the storage when the activation command of the storage is monitored; based on the first address information, indexing the current configuration information and a preset address hash table, a first target counter specified by the activation command from a preset counter table, wherein the total number of counters in the counter table is less than the total number of memory cell arrays in the memory; judging whether the count value of the first target counter reaches a first threshold value or not; and if the count value of the first target counter reaches a first threshold value, stopping sending of the activation command, and sending a refresh management command request to a refresh controller of the memory. According to the method and the device, hardware resources of the counter can be saved under the condition that data loss caused by the line hammering command is prevented.

Description

technical field [0001] The present application relates to the technical field of memory, in particular, to a command monitoring method, device, controller, system, equipment and storage medium. Background technique [0002] Volatile memory devices such as DRAMs determine data based on charge stored in capacitors. However, since the charge stored in the capacitor may leak in various forms over time, a volatile memory device periodically performs a refresh operation. As processes for manufacturing memory devices shrink and the interval between word lines narrows, the influence of charges of memory cells connected to another word line adjacent to the word line due to voltage distribution of the word line increases. Row hammering occurs when a word line is intensively accessed, that is, due to the voltage of the active state of one word line, the data stored in the memory cells connected to other word lines adjacent to that word line lost. Charges stored in memory cells may b...

AI Technical Summary

Problems solved by technology

[0003] In the known scheme, most of the row hammer control is counted by the Active command (activation command) in units of Row (row) or Bank (storage block), and the system with more memory cell arrays will consume relatively large hardware resource

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