Transverse bias strength enhancement
A biasing and shielding technology, applied in the field of double free layer tunneling magnetoresistive read head, can solve the problems of RHB coercivity reduction, RHB coercivity negative impact, etc.
Pending Publication Date: 2021-12-21
WESTERN DIGITAL TECH INC
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Problems solved by technology
However, MgO has a negative effect on the RHB coercivity when used as a read junction insulator to ensure chemical compatibility with the MgO TMR barrier
Thus, while the MgO junction insulator is chemically compatible with the TMR barrier and is beneficial for achieving higher areal density, the benefit is offset by the degradation of head stability and performance reliability due to reduced RHB coercivity
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[0017] Hereinafter, reference is made to embodiments of the present disclosure. It should be understood, however, that the disclosure is not limited to the particular embodiments described. In fact, any combination of the following features and elements, whether related to different embodiments or not, is contemplated to implement and practice the present disclosure. Furthermore, although embodiments of the present disclosure may achieve advantages over other possible solutions and / or over the prior art, whether a particular advantage is achieved by a given embodiment does not limit the disclosure. Accordingly, the following aspects, features, embodiments and advantages are merely illustrative and are not to be considered elements or limitations of the appended claims unless expressly recited in a claim. Likewise, references to "the present disclosure" should not be construed as a generalization of any inventive subject matter disclosed herein, and should not be considered an...
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Abstract
The present disclosure generally related to read heads having dual free layer (DFL) sensors. A read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Behind the DFL sensor away from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The insulating material is a multilayer structure. A first layer of the multilayer structure is composed of the same material as the tunnel magnetoresistive barrier layer, such as MgO, and is disposed adjacent the DFL sensor, yet spaced from the RHB structure. A second layer of the multilayer structure is a different insulating layer that is disposed adjacent the RHB structure, yet spaced from the DFL sensor. The multilayer structure helps improve areal density without degrading head stability and performance reliability by maintaining RHB coercivity.
Description
technical field [0001] Embodiments of the present disclosure generally relate to a dual free layer (DFL) tunnel magnetic resistive (TMR) read head. Background technique [0002] The read head usually contains an antiferromagnetic (AFM) layer, which results in a considerable spacing between the shields. A read head without an AFM layer can shrink the distance between shields. [0003] One such read head is a DFL read head with a double free layer (DFL) sensor. The DFL read head does not have an AFM layer, but instead has a longitudinally individually stabilized by an antiferromagnetically coupled (AFC) soft bias (SB) structure on either side of the sensor between the shields. Two free layers. The DFL sensor operates in scissor mode when laterally biased at the strip rear edge by a permanent magnetic or rear hard bias (RHB) structure that delivers two readout amplitudes with self-noise cancellation. double high. A major challenge in a DFL read head is that the RHB provide...
Claims
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IPC IPC(8): G11B5/31G11B5/53G11B5/55
CPCG11B5/3146G11B5/5539G11B5/532G11B5/3909G11B5/3912G11B5/3932G11B5/3954G11B5/3974G11B5/3967G11B5/398G11B2005/3996
Inventor 毛明C-J·钱
Owner WESTERN DIGITAL TECH INC