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Page buffer and semiconductor memory device having the same

一种页缓冲器、锁存的技术，应用在半导体存储器装置领域，能够解决数据丢失等问题

Pending Publication Date: 2021-12-28
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In volatile memory devices, stored data is lost when power to the device is interrupted

Method used

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  • Page buffer and semiconductor memory device having the same
  • Page buffer and semiconductor memory device having the same
  • Page buffer and semiconductor memory device having the same

Examples

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Embodiment Construction

[0027] Specific structural and functional descriptions are provided herein to describe embodiments of the present disclosure. However, the invention may be configured or arranged in various other forms and thus the invention is not limited to the disclosed embodiments.

[0028] Various embodiments of the present disclosure are described more fully below with reference to the accompanying drawings so that those skilled in the art may easily practice the invention. Throughout this specification, references to "an embodiment," "another embodiment," etc. do not necessarily refer to only one embodiment, nor do different references to any such phrases necessarily refer to the same embodiment. Additionally, the term "implementation" when used herein does not necessarily refer to all implementations.

[0029] figure 1 is a block diagram illustrating a memory system including a memory device according to an embodiment of the present disclosure.

[0030] refer to figure 1 , the memo...

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Abstract

Provided herein may be a page buffer and a semiconductor memory device having the same. The page buffer may include a sensing node, of which a potential is controlled based on an amount of current flowing through a bit line during a data sensing operation and based on a potential of a page buffer common node during a data transmission operation, and a main latch component configured to latch data based on the potential of the sensing node, wherein the main latch component latches the data depending on a first trip voltage and the potential of the sensing node during the data transmission operation, and latches the data depending on a second trip voltage and the potential of the sensing node during the data sensing operation, the first trip voltage and the second trip voltage being different.

Description

technical field [0001] Various embodiments of the present disclosure relate to electronic devices, and more particularly, to a page buffer and a semiconductor memory device having the same. Background technique [0002] Semiconductor memory devices are fabricated using semiconductors such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), or indium phosphide (InP). Generally, semiconductor memory devices are one of two types, volatile memory devices or nonvolatile memory devices. [0003] In volatile memory devices, stored data is lost when power to the device is interrupted. Representative examples of volatile memory devices include static random access memory (SRAM), dynamic RAM (DRAM), and synchronous DRAM (SDRAM). In a nonvolatile memory device, stored data is retained even when power to the device is interrupted. Representative examples of nonvolatile memory devices include read only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM),...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C7/10
CPCG11C16/10G11C7/1048G11C16/24G11C16/26G11C16/0483
Inventor 朴康愚
Owner SK HYNIX INC