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Memory device

A technology for storage devices and capacitors, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as limitations in the integration of two-dimensional storage devices

Pending Publication Date: 2022-01-04
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ultra-expensive equipment is required to form fine patterns, but there are limitations in increasing the integration of two-dimensional memory devices

Method used

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Embodiment Construction

[0024] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Throughout this disclosure, like reference numerals refer to like parts in the various figures and embodiments of the invention.

[0025] The figures are not necessarily to scale and in some instances proportions may have been exaggerated to clearly illustrate features of the embodiments. When a first layer is referred to as being "on" a second layer or "on" a substrate, it refers not only to the case where the first layer is formed directly on the second layer or substrate, but also where the third layer A condition that exists between a first lay...

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Abstract

A memory device includes a substrate, an active layer spaced apart from a surface of the substrate and laterally oriented in a first direction and including an opened first side, a closed second side, and a channel layer between the first side and the second side, and a word line laterally oriented in a second direction crossing the first direction while surrounding the channel layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2020-0080872 filed on July 1, 2020, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments of the present invention relate to a semiconductor device, and more particularly, to a three-dimensional semiconductor memory device with higher integration. Background technique [0004] Since the degree of integration of a two-dimensional (2D) memory device is mainly determined by the area occupied by a unit memory cell, it is limited by fine pattern formation techniques. Forming fine patterns requires ultra-expensive equipment, but there are limitations in increasing the integration level of two-dimensional memory devices. In order to solve this problem, a three-dimensional memory device having memory cells arranged in a three-dimensional manner has been proposed. Contents of the invention [0005...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108
CPCH10B12/30H01L29/778B82Y10/00H01L29/42392H01L29/0673H01L29/775H10B12/03H10B12/05H10B12/482H10B12/50H01L27/1225H01L27/124H01L27/1255H01L29/7869H01L29/7606H01L29/78696H01L29/78672H01L29/24H10B12/488
Inventor 金一道辛东善金承焕
Owner SK HYNIX INC