Standard sheet, preparation method thereof and machine difference calibration method

A calibration method and standard chip technology, which is applied in the field of semiconductors, can solve the problem of increasing the test error of TP test equipment, and achieve the effect of avoiding errors

Pending Publication Date: 2022-04-29
BOE TECH GRP CO LTD +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the use of existing standard chips will increase the test error of TP test equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Standard sheet, preparation method thereof and machine difference calibration method
  • Standard sheet, preparation method thereof and machine difference calibration method
  • Standard sheet, preparation method thereof and machine difference calibration method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0052] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0053] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanyin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductors, and discloses a standard sheet, a preparation method thereof and an organic difference calibration method. The standard sheet comprises a substrate, a first pattern layer and a second pattern layer, the substrate is provided with a first surface and a second surface which are oppositely arranged; the first pattern layer is arranged on the first surface of the substrate; the second pattern layer is arranged on the second face of the substrate, and the orthographic projection of the first pattern layer on the substrate coincides with the orthographic projection of the second pattern layer on the substrate. When the front side of the standard sheet is tested, the first pattern layer is located on the test side, and the first pattern layer is tested; when the standard sheet is subjected to an overturning test, the second pattern layer is located on the test side, and the second pattern layer is tested; therefore, the influence of light scattering on the calibration of the TP test equipment can be avoided.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular, to a standard sheet, a preparation method of the standard sheet, and a machine error calibration method using the standard sheet. Background technique [0002] TP (Total Pitch) is an important engineering data used to characterize the position accuracy of the pattern formed by lithography. The TP test equipment will measure the actual coordinates of the Mark (mark) formed by lithography in the machine coordinate system. The distance between the coordinates and the ideal coordinates The deviation is the positional accuracy of the pattern. The position accuracy can represent changes such as the scaling and movement of the Shot (exposure field), which can be used as a reference for subsequent film layers or other substrates to make corresponding changes and alignments to ensure the accuracy of the relative position. [0003] However, using the existing standard sheet ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70616G03F7/7085
Inventor崔晓晨杨军张灿王鑫李官正
OwnerBOE TECH GRP CO LTD