Circuit structure and method for improving DCDC chip performance

A technology of circuit structure and chip performance, applied in electrical components, adjusting electrical variables, climate sustainability, etc., can solve the problems of low low-voltage load capacity, large power tube area, slow start-up speed of DCDC chips, etc., to reduce conduction. Through impedance, improve the low-voltage load capacity, reduce the size of the effect

Pending Publication Date: 2022-08-02
西安华泰半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a circuit structure and method for improving the performance of DCDC chips, so as to solve the problems of slow start-up speed of DCDC chips, low low-voltage load capacity and large power tube area in the prior art.

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  • Circuit structure and method for improving DCDC chip performance
  • Circuit structure and method for improving DCDC chip performance

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Embodiment Construction

[0024] Below in conjunction with accompanying drawing, the present invention is described in further detail:

[0025] The invention discloses a circuit structure and method for improving the performance of a DCDC chip, see figure 1 , the core structure of the structure includes a power tube M1, the source and drain terminals of the power tube M1 are both connected to a comparator 2, the output end of the comparator 2 is connected to the charge pump 3, and the output end of the negative pressure charge pump 4 is connected to The grid of the power transistor M1 is connected.

[0026] Specifically, the power transistor is a PMOS transistor.

[0027] The working process corresponding to the above structure is: when the circuit is working, the voltage across the source and drain of the power tube M1 is compared by the comparator 2. If the value obtained by subtracting the set threshold voltage from the drain voltage is greater than the source voltage, then The output of the compa...

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Abstract

According to the circuit structure and method for improving the performance of the DCDC chip, a comparator and a charge pump are arranged behind a power tube, when it is detected that the voltage of the source end and the drain end of the power tube in DCDC is larger than a given threshold voltage, the circuit structure can provide a negative voltage conveyed to the grid electrode of the power tube, and therefore the performance of the DCDC chip is improved. Therefore, the conduction impedance of the power tube is reduced, and the problems that when the DCDC chip is started, the starting speed is low due to the fact that the impedance of the power tube is too large, and when the input voltage is low, the loading capacity is low due to the fact that the impedance of the power tube is too large are solved.

Description

technical field [0001] The invention belongs to the technical field of switching power supplies, and in particular relates to a circuit structure and method for improving the performance of a DCDC chip. Background technique [0002] At this stage, the application of DCDC chips is becoming more and more extensive. The advantages and disadvantages of its performance in various aspects such as load capacity, startup speed and conversion efficiency, as well as the production cost of the chip itself determine the core competitiveness of the chip. During the startup process of the DCDC chip, the startup speed of the chip is often too slow due to the high on-resistance of the power tube, and the conversion efficiency is low during the startup process. There is a problem of low load capacity at low voltage; and in order to reduce the on-resistance of the power transistor, the area of ​​the power transistor needs to be increased, which leads to an increase in the production cost of t...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H02M1/08H02M1/088H02M3/156H02M3/158
CPCH02M1/08H02M1/088H02M3/156H02M3/158Y02B70/10
Inventor王双彦周罡何磊李光强聂瑞雨
Owner西安华泰半导体科技有限公司