Semiconductor equipemnt with capacitor and its mfg. method

A technology of capacitors and semiconductors, applied in semiconductor/solid-state device manufacturing, capacitors, semiconductor devices, etc., can solve problems such as increased probability of contact problems

Inactive Publication Date: 2004-10-13
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition to the problems shown above, when the design rules are lower...

Method used

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  • Semiconductor equipemnt with capacitor and its mfg. method
  • Semiconductor equipemnt with capacitor and its mfg. method
  • Semiconductor equipemnt with capacitor and its mfg. method

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Embodiment Construction

[0015] according to Figure 5 to Figure 16 An embodiment of the present invention will be described in detail below in order to provide a more thorough understanding of the principles of the present invention. However, those of ordinary skill in the art can appreciate that the present invention can be implemented in various forms. In addition, descriptions of well-known structures and techniques are omitted for clarity and clarity.

[0016] first reference Figure 15 A semiconductor device implemented according to an embodiment of the present invention preferably includes an intermediate insulating layer 102 on a semiconductor substrate 100 . The interlayer insulating layer 102 preferably embeds the storage node contact pad 104 . The capacitor bottom electrode 106 may be placed over the contact pad 104 and electrically connected thereto. The capacitor lower electrode 106 includes a pad-shaped storage node 40 electrically connected to the storage node contact pad 104 ; and a...

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Abstract

A semiconductor substrate cotains a semiconductor substrate and an inter-layer insulating film formed on the substrate. The inter-layer insulating film contains contact pads formed in the insulating film. Capacitor lower electrodes are connected electrically to the contact pads. The lower electrodes comprise the pad-shaped storage nodes electrically connected to the contact pads and the cup-shaped storage nodes arrayed on the storage nodes. According to such a method, a capacitance can be increased, reducing not-open contacts, and the leanings of the storage nodes can also be decreased.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to capacitor structures and methods of manufacturing the same. Background technique [0002] Many of the latest integrated circuits require the use of capacitors. For example, in dynamic random access memory (DRAM) devices, capacitors perform a vital data storage function. As DRAM and other memory devices become more highly integrated, new manufacturing processes are required to increase the storage capacity of these capacitors. However, it is becoming more and more difficult to obtain the required capacitance. Sufficient capacitance is very important to obtain unique device characteristics such as data retention, refresh effect, and constant operating characteristics. [0003] In order to increase capacitance, the semiconductor industry has focused on developing capacitor electrodes with three-dimensional structures. This is because the capacitance of a capacitor is dire...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/768H01L21/8242H01L27/108
CPCH01L28/91H01L27/10814H01L27/10855H01L21/76895H10B12/315H10B12/0335H10B12/00
Inventor 郑泰荣李宰求朴济民
Owner SAMSUNG ELECTRONICS CO LTD
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