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Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of poor wiring reliability, small input and output areas, and hindering chip scale reduction.

Inactive Publication Date: 2007-01-31
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, although semiconductor devices are recently required to reduce the chip size, in the existing electrode pad structure, the electrode pad area still needs a certain specification or larger area for wire bonding connection, so that the input and output area cannot be smaller than the electrode pad. area, so there is a problem that hinders the reduction of the chip size
[0007] Moreover, in the existing rewiring technology, since the wiring is extended after the formation of the semiconductor device, it needs to be extended to a very large thickness to protect the protective layer of the semiconductor device, and there are electrical characteristics caused by a long extension distance and due to The problem that the reliability of the wiring itself deteriorates due to the step difference of the extended wiring makes it difficult to move the electrode pads to the active area by rewiring technology

Method used

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  • Semiconductor device
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Examples

Experimental program
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Embodiment approach 1

[0042] In Embodiment 1, electrode pads are formed to straddle the input-output region and the active region, but in Embodiment 2, the Figure 5 , Figure 6 As shown, the electrode pad 11 is led out from the input-output area 15 to the active area 16 by using the wiring 40 and formed in the area 16 .

[0043] In this way, by drawing the electrode pad 11 from the pad metal piece 12 and forming it in the active region 16, it is not necessary to make the pad metal piece 12 have the same shape as the electrode pad 11, so the area of ​​the pad metal piece 12 can be reduced, and the pad metal piece 12 can be reduced. The area of ​​the input / output region 15 is reduced to such an extent that a circuit for surge prevention can be formed. That is, the area of ​​the input / output region 15 where the area of ​​the electrode pad 11 has been limited conventionally can be reduced, and the area of ​​the semiconductor device can be reduced.

[0044] Also, if Figure 7 As shown, the semicondu...

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Abstract

When an interlayer film ( 22 ) is formed to have a large thickness and an electrode pad ( 11 ) is partly or wholly led out from an active region ( 16 ), an I / O region ( 15 ) can be reduced in area. Thus, it is possible to reduce an area of a semiconductor device.

Description

technical field [0001] The present invention relates to a semiconductor device having an input-output unit shielding electrode pads with wiring. Background technique [0002] see Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 , Figure 13 , the structure of the electrode pad of the conventional semiconductor device will be described. [0003] Figure 8 It is an enlarged view of the key part of the semiconductor device showing the vicinity of the existing electrode pad, in which the SiN insulating film and protective film on the surface are omitted. Figure 9 is a cross-sectional view of a semiconductor device showing the vicinity of an existing electrode pad, and is Figure 8 A-A' sectional view of . Figure 10 is a cross-sectional view showing the composition of an electrode pad on which bumps have been formed, Figure 11 is a plan view showing the composition of electrode pads on which bumps have been formed, Figure 12 is a cross-sectional view showi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485
CPCH01L23/5225H01L2224/45124H01L2924/01082H01L2924/01004H01L2224/05624H01L2224/48724H01L2224/48699H01L2924/01029H01L2924/00013H01L2924/014H01L2924/01013H01L2224/45147H01L24/48H01L2224/1134H01L2924/05042H01L2224/48463H01L24/05H01L2224/48747H01L2224/04042H01L2224/05647H01L2924/01033H01L2924/01006H01L2924/01078H01L2924/01014H01L2224/131H01L23/525H01L2224/48847H01L2924/3025H01L2224/48799H01L24/45H01L2224/02166H01L2224/023H01L2224/0401H01L2224/05553H01L2224/45015H01L2924/00011H01L2924/00014H01L2224/13099H01L2224/48824H01L2924/00H01L2924/0001H01L21/28
Inventor 永井纪行滨谷毅三村忠昭
Owner PANASONIC CORP