Charged Particle Beam Irradiation System

a charge-particle beam and beam irradiation technology, applied in the direction of material analysis using wave/particle radiation, instruments, nuclear engineering, etc., can solve the problem of remarkable resolution degradation of image obtained as averaging result, and achieve the effect of preventing image dri

Inactive Publication Date: 2011-03-31
HITACHI HIGH-TECH CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This method effectively prevents image drift caused by charged specimens, maintaining image resolution without destructive coatings or precise gas pressure control, and can be implemented at a low cost by modifying the control procedure of existing scanning electron microscopes.

Problems solved by technology

Therefore when the positions of the images are deflected from each other in the respective frames, the image obtained as the averaging result deteriorates remarkably in resolution.
A charged particle beam irradiation system which irradiates a charged particle beam also has the same problem.

Method used

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  • Charged Particle Beam Irradiation System
  • Charged Particle Beam Irradiation System
  • Charged Particle Beam Irradiation System

Examples

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Embodiment Construction

[0037]With reference to FIG. 1, an example of a charged particle beam irradiation system according to the invention will be described. In this example, the charged particle beam irradiation system is a scanning electron microscope. The scanning electron microscope in the example has an electron source cathode 205, a first anode 206, a second anode 207, a first converging lens 208, an aperture plate 209, a second converging lens 210, an orthogonal field generator 214, a scanning coil 212, an objective lens 211 and a specimen support 203. The specimen support 203 is arranged in a specimen chamber 201. The specimen chamber 201 is kept in a high vacuum state of about 1×10−4 Pa by a vacuum exhaust system 222.

[0038]The scanning electron microscope further has power sources 217, 218, 219, and 220 for supplying voltage to be applied to the electron source cathode 205, the first anode 206, the second anode 207, the first converging lens 208, the second converging lens 210, and the objective ...

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Abstract

It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material.A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. application Ser. No. 12 / 182,709 filed Jul. 30, 2008 and claims priority of Japanese patent application no. 2007-199933 filed Jul 31, 2007.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates to a charged particle beam irradiation system which irradiates a specimen with charged particles such as electron, and particularly to a charged particle beam irradiation system which analyzes the aspect on the surface of a specimen using a secondary discharged signal.[0004]2. Description of the Related Art[0005]In the semiconductor manufacturing industry, a scanning electron microscope (SEM), a CD-SEM for performing critical dimension scanning, and an inspection SEM for inspecting the pattern shape and the like are widely used as an inspection device of a semiconductor device.[0006]In these days, a highly integrated semiconductor device has been developed rapidly in the semic...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): G21K1/06
CPCH01J37/026H01J37/147H01J2237/0044H01J37/28H01J37/265
InventorFUKAYA, RITSUOWANG, ZHIGANG
OwnerHITACHI HIGH-TECH CORP