Charged particle beam apparatus and inspection method using the same

Active Publication Date: 2016-05-26
HITACHI HIGH-TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention provides a way to inspect the inside of a sample without damaging it. We can get information about the sample's internal structure and analyze how deep it is. This allows for better inspection of samples with complex internal structures.

Problems solved by technology

However, this method involves a problem.
For this reason, the above method is inferior in the accuracy of sample analysis in the cross-sectional direction and it has been found that since an electron beam is caused to penetrate to the interior, damage to the sample is not negligible.

Method used

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  • Charged particle beam apparatus and inspection method using the same
  • Charged particle beam apparatus and inspection method using the same
  • Charged particle beam apparatus and inspection method using the same

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first embodiment

[0064]A description will be given to the first embodiment of the present invention with reference to FIG. 1 to FIG. 6. In the following description of this embodiment, a scanning electron microscope will be taken as an example of a charged particle beam apparatus. In the charged particle beam apparatus, information in the cross-sectional direction is analyzed based on the transient characteristics (emission characteristics) of a detection signal of secondary electrons. FIG. 1 is a block diagram of the scanning electron microscope in this embodiment. The scanning electron microscope 101 is made up of an electronic optical system, a stage mechanism system, a control system, an image processing system, and an operating system. The electronic optical system is made up of an electron gun 102, a deflector 103, an objective lens 104, and a detector 105. The stage mechanism system is made up of an XYZ stage 106 and a sample holder 107. To the sample holder 107, a voltage applying means may ...

second embodiment

[0070]A description will be given to the second embodiment of the present invention with reference to FIG. 7 to FIG. 9. The items described in relation to the first embodiment and not found in the description of this embodiment can also be applied to this embodiment unless there are special circumstances. The description of this embodiment will be given to: the configuration of an electron microscope with enhanced accuracy of synchronization with a time base at the time of electron beam irradiation; and a method for analyzing the length in the cross-sectional direction (depth direction) of a sample made of a plurality of materials.

[0071]FIG. 7 is a block diagram of a scanning electron microscope in this embodiment. The scanning electron microscope in this embodiment is obtained by providing the scanning electron microscope illustrated in FIG. 1 with: a blanker 130 for interrupting an electron beam; and a blanking control unit 131 which applies a pulsed interruption control waveform ...

third embodiment

[0074]A description will be given to the third embodiment of the present invention with reference to FIG. 7 and FIG. 10 to FIG. 15. The items described in relation to the first or second embodiment and not found in the description of this embodiment can also be applied to this embodiment unless there are special circumstances. The description of this embodiment will be given to an electron microscope having a function of analyzing morphological characteristics in the cross-sectional direction (depth direction) using a SEM image to inspect an embedded pattern.

[0075]This embodiment uses the scanning electron microscope, illustrated in FIG. 7, capable of accurately controlling irradiation time by pulsing an electron beam. With this configuration, irradiation of the pulsed electron beam 132 and an irradiation position controlled by the deflector 103 are controlled with timing controlled by the master clock generation unit 114. Secondary electrons 133 pulsed and emitted from a sample are...

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Abstract

A charged particle beam apparatus makes it possible to acquire information in the cross-sectional direction (depth direction) of a sample having an internal structure in a nondestructive manner with reduced damage. Further, the apparatus makes it possible to analyze the depth and / or dimensions in the depth direction of the internal structure. The charged particle beam apparatus includes: a means for providing a time base for control signals; a means for applying a charged particle beam to a sample in synchronization with the time base and controlling an irradiation position; a means for analyzing the emission characteristics of an emission electron from the sample from a detection signal of the emission electron; and a means for analyzing the electrical characteristics or cross-sectional morphological characteristics of the sample based on the emission characteristics.

Description

CLAIM OF PRIORITY[0001]The present application claims priority from Japanese patent application JP 2014-235578 filed on Nov. 20, 2014, the content of which is hereby incorporated by reference into this application.TECHNICAL FIELD[0002]The present invention relates to a charged particle beam apparatus and an inspection method using the same.BACKGROUND ART[0003]Among charged particle beam apparatuses, there are electron microscopes as microscopes with which a sample can be magnified and observed. Electron microscopes use an electron beam and are utilized in micro-shape observation and composition analysis at the nanometer level. Especially, scanning electron microscopes (hereafter, abbreviated as SEMs) are characterized in that SEMs enables analysis dimensions of the order from millimeters to nanometers without being limited by sample sizes and in wide use from morphological and compositional analysis of high-performance materials to measurements and inspections on fine patterns of se...

Claims

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Application Information

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IPC IPC(8): H01J37/244H01J37/28H01J37/285
CPCH01J37/244H01J37/28H01J37/285H01J2237/24592G01N23/2251G01N23/00
InventorTSUNO, NATSUKISUZUKI, NAOMASAKAZUMI, HIDEYUKIHOTTA, SHOJIKIMURA, YOSHINOBU
OwnerHITACHI HIGH-TECH CORP