Semiconductor device and semiconductor module

a semiconductor module and semiconductor technology, applied in semiconductor devices, transformer/inductance details, basic electric elements, etc., can solve the problems of hardly studied dielectric breakdown in the region between the low voltage region and the transformer, and the thin insulating film cannot resist such high voltage, so as to enhance the voltage resistance and enhance the voltage resistance

Inactive Publication Date: 2017-10-05
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution effectively enhances voltage resistance and prevents dielectric breakdown between the high voltage coil and low voltage regions, ensuring reliable operation even under high potential differences.

Problems solved by technology

The reason is that high voltage between the coils of the transformer is applied to the insulating film and a thin insulating film cannot resist such high voltage.
Therefore, occurrence of dielectric breakdown in a region between the low voltage region and the transformer has hardly been studied.

Method used

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  • Semiconductor device and semiconductor module
  • Semiconductor device and semiconductor module
  • Semiconductor device and semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

reference example 1

(1) Reference Example 1

[0141]As illustrated in FIGS. 20 to 24, Reference Example 1 is different from the above embodiment in that a capacitor 80 is not provided in an intermediate region 48.

[0142]In addition, regarding the problem described with reference to FIG. 8, the present inventors have found that the cause of leakage current which causes breakdown in a horizontal direction is related to the constituent material of an insulating film in contact with an upper coil 21.

[0143]Thereupon, in Reference Example 1, a compressive stress film having compressive stress as internal stress is employed as an etching stopper film 29 selectively in an insulating layer 28 where the upper coil 21 is embedded and an insulating layer 28 right above the insulating layer 28, though most insulating layers 28 are formed by overlapping an etching stopper film 29, which is constituted of a tensile stress SiN film (Tensile-SiN), with an interlayer insulating film 30, which is constituted of an SiO2 film ...

reference example 2

(2) Reference Example 2

[0187]Regarding the problem described with reference to FIG. 8, the present inventors have found that the cause of leakage current which causes breakdown in a horizontal direction is related to (1) formation of a heterogeneous interface due to contact of different insulating materials at a lateral side of the upper coil 21, and (2) existence of a processed interface damaged by film production such as CVD in a manufacturing process of the insulating layer laminated structure 27.

[0188]Thereupon, in Reference Example 2, a removal region 110 from which an etching stopper film 29 is selectively removed is formed in an intermediate region 48 of an insulating layer 28 where the upper coil 21 is embedded and an insulating layer 28 right above said insulating layer 28 as illustrated in FIGS. 25, 27, 28 and 29. The removal region 110 is formed in one band shape (e.g., width of 50 μm to 100 μm) surrounding each high voltage region 36 as illustrated in FIGS. 25 and 27. In...

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Abstract

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. application Ser. No. 14 / 537,234, filed on Nov. 10, 2014 (allowed on Feb. 28, 2017), which claims the benefit of priority of the Japanese Patent Application No. 2013-235190 filed in the Japan Patent Office on Nov. 13, 2013, Japanese Patent Application No. 2013-235191 filed in the Japan Patent Office on Nov. 13, 2013, Japanese Patent Application No. 2014-145041 filed in the Japan Patent Office on Jul. 15, 2014, and Japanese Patent Application No. 2014-219492 filed in the Japan Patent Office on Oct. 28, 2014, the entire disclosures of which are hereby incorporated by reference.FIELD OF THE INVENTION[0002]The present invention relates to a semiconductor device provided with a transformer, and a semiconductor module provided with the semiconductor device.[0003]BACKGROUND ART[0004]In the power electronics field, for example, a transformer having a pair of coils which are disposed so as to face each oth...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01F27/28H01L23/522H01L23/58H01L23/495H01L23/64H10N97/00
CPCH01L23/49575H01L2224/49113H01L2224/05567H01L2924/14H01L2224/04042H01L2924/10253H01L2224/48247H01L23/5225H01L2924/19041H01L2224/05554H01L2924/13091H01L2924/10272H01L23/645H01F27/288H01L2224/48137H01F2027/2819H01L2924/19042H01L2924/19104H01F27/2804H01L2224/06135H01L23/585H01L23/5227H01L23/3107H01L2224/48195H01L2224/49175
InventorOSADA, KOSEINISHIMURA, ISAMUKAGAWA, TETSUYAYANAGISHIMA, DAIKIISHIKAWA, TOSHIYUKIMIFUJI, MICHIHIKOKAGEYAMA, SATOSHIKASAHARA, NOBUYUKI
OwnerROHM CO LTD