Scheme of boosting adjustable ground level(s) of storage capacitor(s) of bjt pixel circuit(s) in pixel array circuit of image sensor apparatus
a technology of image sensor and storage capacitor, which is applied in the field of bipolar junction transistor pixel circuit, can solve the problems of unavoidably degrading image contrast, limited performance of conventional optical tracking system using pixel circuit having photo detector structure to sense the energy of incident light to capture image data, and poor optical tracking performance, so as to improve image quality, improve image contrast, and improve the effect of tracking performance of image sensor apparatus
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[0013]FIG. 1 is a diagram of an image sensor apparatus 100 according to an embodiment of the invention. The image sensor apparatus 100 is used for capturing image data of an illuminated navigation surface and comprises a pixel array circuit 105 and a controlling circuit 110. The pixel array circuit 105 comprises a plurality of bipolar junction transistor (BJT) pixel circuits 115_11, . . . , 115_1M, . . . , 115N1, . . . , and 115_NM, i.e. N×M BJT pixel circuits respectively corresponding to different pixel units spatially disposed on in a frame wherein the numbers of N and M are not limited.
[0014]Each BJT pixel circuit (e.g. 115_11, but not limited) at least comprises a photo detector PD such as a photodiode, a BJT transistor Q1, a shutter circuit SH, an amplifier circuit AMP, and a storage capacitor C1. For example, in this example, the shutter circuit SH comprises the transistors M1 and M3. The amplifier circuit AMP comprises transistors M2, M4, and M5. The storage capacitor C1 is ...
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