3 results about "Electron attachment" patented technology

The present invention relates to an apparatus and method for wafer oxide removal and reflow treatment. In particular, the present invention relates to an apparatus for wafer oxide removal and reflow treatment, comprising: a heating plate, a sample plate for supporting a wafer sample above the heating plate, and an electron attachment pin plate above the sample plate, wherein the heating plate is configured to be capable of moving up and down, and contacting and heating the sample plate.

The present application relates to a method and device for removing particles from an ion beam etching system, which comprises a metal grid added to the bottom of the reaction chamber of the ion beam etching system, the grid being connected to a DC power supply to generate a positive voltage, the voltage value of the applied positive voltage being adjusted within 100kv according to the size of the particles to be removed. The material of the metal grid c is a hard metal such as molybdenum or nickel, and the mesh size is less than 5mm. After the etching process is completed, the ion source of the ion beam etching system is disconnected, and the lower electrode is rotated to be perpendicular to the grid c; the neutralizer is turned on to generate a large number of electrons attached to the particles to be removed to make the particles negatively charged; the grid c applies a positive voltage through the DC power supply c, and the negatively charged particles move towards the grid c under the action of the electric field; the particles pass through the mesh of the grid c and are pumped out of the chamber by the molecular pump, so that the particles are quickly and effectively removed, the deposition of particles in the interior of the reaction chamber is prevented, and the production efficiency of the ion beam etching system is improved.

The invention discloses a twisted wire corona initial voltage prediction method based on a finite element method, and the method comprises the steps: selecting a parallel smooth wire with the same outer radius as a target twisted wire as a reference structure, calculating the corona initial field intensity of the reference structure through employing a Pickup formula, and calculating the electric field distribution of the reference structure based on the corona initial field intensity, a dynamic criterion constant suitable for the target twisted wire is obtained through classical corona initial criterion back calculation in combination with the integral relation between the electron ionization coefficient and the electron adhesion coefficient; establishing a finite element model based on the actual structure parameters of the target twisted wire, and calculating the electric field distribution of the surface of the twisted wire and the adjacent area of the model under the applied voltage through a finite element method; and combining the dynamic criterion constant with the electric field distribution of the target twisted wire, and solving a voltage value meeting a corona initial condition and a corona initial voltage corresponding to the target twisted wire through iterative calculation.