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Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.
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results about How to "Improve field effect" patented technology
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Perovskite quantum dot / organic semiconductor single-crystal heterojunction transistor and preparation method thereof
Active
CN116709789B
quality improvement
flat surface
Heterojunction
Quantum dot
The application discloses a
perovskite
quantum
dot /
organic semiconductor
single crystal
heterojunction
transistor
and a preparation method thereof. The
perovskite
quantum
dot /
organic semiconductor
single crystal
heterojunction
transistor
comprises a gate, an insulating layer, a photosensitive layer, an
active layer
, a source and a drain. The gate, the insulating layer, the photosensitive layer and the
active layer
are arranged in parallel and connected in a vertical direction from bottom to top. The source and the drain are arranged in parallel and connected to the upper surface of the
active layer
. The photosensitive layer is a Cs2AgBiBr6
quantum
dot film, and the active layer is a
pentacene
single crystal
. The preparation method of the
perovskite
quantum dot
/
organic semiconductor
single
crystal
heterojunction
transistor
comprises the following steps: covering the Cs2AgBiBr6
quantum dot
film on the insulating layer as the photosensitive layer; transferring the
pentacene
single
crystal
to the upper surface of the photosensitive layer as the active layer; and arranging the source and the drain on the active layer. The perovskite
quantum dot
/ organic
semiconductor
single
crystal
heterojunction transistor obtained by the application shows
strong field
effect, high on / off ratio and high hole mobility.
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Owner:
TIANJIN UNIV
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