Process for producing high-power quick soft-restoring diode
A soft recovery, diode technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the hard reverse recovery characteristics, difficult to solve the forward voltage drop and reverse recovery characteristics of high-power fast soft recovery diodes and high power, limiting the application of high-power high-frequency devices, etc., to achieve the effect of soft reverse recovery characteristics
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Embodiment 1
[0048] Preparation of P + PINN + Type high power fast soft recovery diode:
[0049] 1).Primary diffusion (closed expansion): cleaned original silicon wafer, diffused at a constant temperature in a 1200°C diffusion furnace, using 99.9999% pure gallium source for diffusion, with a surface concentration of 10 17 / cm 3 ;
[0050] 2). Remove P-type on one side: Use a grinder to grind off one side of the P-type diffuser;
[0051] 3). Phosphorus deposition: clean and remove the diffusion sheet on one side, diffuse at a constant temperature in a 1000°C diffusion furnace, and use a liquid source of phosphorus oxychloride (POCl 3 ) diffusion, the surface concentration is ≥1×10 19 / cm 3 ;
[0052] 4). Dephosphorization of P surface: use a screen printing machine to print the P-shaped surface, and corrode the phosphorus on the P-shaped surface;
[0053] 5). Phosphorus propulsion: clean the diffusion sheet, and propel it at a constant temperature in a 1200°C diffusion furnace;
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Embodiment 2
[0079] Preparation of P + PINN + Type high power fast soft recovery diode:
[0080] 1).Primary diffusion (closed expansion): clean the original silicon wafer, diffuse at a constant temperature in a diffusion furnace at 1250°C, use 99.9999% pure gallium source for diffusion, and the surface concentration is 10 18 / cm 3 ;
[0081] 2). Remove P-type on one side: Use a grinder to grind off one side of the P-type diffuser;
[0082] 3). Phosphorus deposition: clean and remove the diffusion sheet on one side, diffuse at a constant temperature in a 1150°C diffusion furnace, and use a liquid source of phosphorus oxychloride (POCl 3 ) diffusion, the surface concentration is ≥9×10 19 / cm 3 ;
[0083] 4). Dephosphorization of P surface: use a screen printing machine to print the P-shaped surface, and corrode the phosphorus on the P-shaped surface;
[0084] 5). Phosphorus propulsion: clean the diffusion sheet, and propel it at a constant temperature in a 1250°C diffusion furnace; ...
Embodiment 3
[0110] Preparation of P + PINN + Type high power fast soft recovery diode:
[0111] 1).Primary diffusion (closed expansion): clean the original silicon wafer, 1230 ℃ diffusion furnace constant temperature diffusion, using 99.9999% pure gallium source diffusion, the surface concentration is 10 18 / cm 3 ;
[0112] 2). Remove P-type on one side: Use a grinder to grind off one side of the P-type diffuser;
[0113] 3). Phosphorus deposition: clean and remove the diffusion sheet on one side, diffuse at a constant temperature in a 1100°C diffusion furnace, and use a liquid source of phosphorus oxychloride (POCl 3 ) diffusion, the surface concentration is ≥5×10 19 / cm 3 ;
[0114] 4). Dephosphorization of P surface: use a screen printing machine to print the P-shaped surface, and corrode the phosphorus on the P-shaped surface;
[0115] 5). Phosphorus propulsion: clean the diffusion sheet, and propel at a constant temperature of 1230°C diffusion furnace;
[0116] 6). Diffusion...
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