Supercharge Your Innovation With Domain-Expert AI Agents!

Method for raising fine quality rate of semiconductor chip

A yield, semiconductor technology, applied in semiconductor/solid-state device manufacturing, photoengraving process of patterned surface, optics, etc., can solve the problems of yield reduction, negative photoresist residue, etc., and achieve the effect of improving yield

Inactive Publication Date: 2009-12-30
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Due to the use of double exposure in the wafer identification code area, the exposure energy is enhanced, which exposes the edges of several chips in the non-wafer identification code area connected to the wafer identification code area, forming negative photoresist residues, which makes the original soldering The area of ​​the bump disappears, resulting in a decrease in yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for raising fine quality rate of semiconductor chip
  • Method for raising fine quality rate of semiconductor chip
  • Method for raising fine quality rate of semiconductor chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Due to the use of double exposure in the wafer identification code area, the exposure energy is enhanced, which exposes the edges of several chips in the non-wafer identification code area connected to the wafer identification code area, forming negative photoresist residues, which makes the original soldering The area of ​​the bump disappears, resulting in a decrease in yield. In order to improve the above situation, the present invention adopts the following method to perform double exposure on the wafer identification code area.

[0031] Please refer to image 3 As shown, the method for improving the yield rate of semiconductor chips of the present invention includes the following steps: coating a layer of negative photoresist S101 on the wafer surface; aligning the wafer identification code area with the photomask S102; using less than non-wafer The exposure energy of the identification code area, the first exposure S103 is performed in the wafer identification cod...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A method for raising yield of semiconductor chip includes coating a negative light-blocking layer on surface of chip, aligning identification code region of chip to light cover, using exposure energy less than that of chip non-identification code region to carry out the first exposure on chip identification code region, making a shift from position of the first exposure and carrying out the second exposure on chip identification code region under the same condition, holding exposed part on adjacent connection edge of chip identification and non-identification code regions, developing unexposed part and preparing complete weld convex point.

Description

technical field [0001] The invention relates to the manufacture of semiconductor chips, in particular to a method for improving the yield rate of semiconductor chips. Background technique [0002] With the miniaturization of the semiconductor manufacturing process, the degree of integration of semiconductor components is getting higher and higher, and there are more and more circuit I / O lines, so more dense conductive connection points - solder bumps are required. The higher the density of solder bumps, the more difficult the processing technology, and the quality of solder bumps directly affects the yield of chips. [0003] To make solder bumps on the wafer, in order to clearly identify the wafer identification code during the solder bump formation process, the double exposure method is used in the wafer identification code area to avoid the formation of solder bumps. For details, refer to Figures 1A-1E . [0004] see Figure 1A , in this process, a layer of negative pho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L21/00
Inventor 王津洲李德君靳永刚
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More