Boundary acoustic wave device

A boundary wave and boundary technology, applied in the direction of impedance network, electrical components, etc., can solve the problem of no special representation, etc., and achieve the effect of reducing the temperature coefficient of delay time, reducing TCD, and reducing costs
CN101213743AInactive Publication Date: 2008-07-02MURATA MFG CO LTD

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
MURATA MFG CO LTD
Publication Date
2008-07-02
Estimated Expiration
Not applicable Β· inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a boundary acoustic wave device (1). A quartz substrate (2) at least forms IDT (4) and an electric medium (3) is formed by the manner of covering IDT (4). The boundary acoustic wave is broadcasted at the boundary of the quartz substrate (2). The thickness of the IDT (4) is determined so that the velocity of the SH boundary acoustic wave falls below those of a slow transverse wave propagating across the quartz substrate (2) and a slow transverse wave propagating across the dielectric (3). The Eulerian angles of the quartz substrate (2) lie in the range with inclined line in Fig 13, thereby capable of using cheap quartz substrate, adopting SH boundary acoustic wave and improving the physics performance and characteristics of machine coupling coefficient K<2>.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a boundary acoustic wave device using boundary acoustic waves propagating at the boundary between first and second media, specifically, to a boundary acoustic wave device in which the first medium is quartz and the second medium is dielectric. Background technique

[0002] Conventionally, characteristic surface wave devices have been widely used to configure oscillators and bandpass filters in various electronic devices such as television receivers and mobile phones. In a surface acoustic wave device, at least one type of IDT (Interdigital Transformer) is formed on a piezoelectric substrate. As the piezoelectric substrate, LiTaO 3 substrate or quartz substrate, etc.

[0003] with LiTaO 3 Compared with the surface acoustic wave filter of the substrate, the surface acoustic wave filter using the quartz substrate is suitable for narrow-band applications. Therefore, surface acoustic wave resonators using quartz substrat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More