Etching substrates mounted with gas wall

Abstract

The invention relates to an etching substrate which is provided with a gas wall. The etching substrate is provided with a central region and a peripheral region which is provided with at least one injection device which injects gas to form the gas wall to control the contact density between etching gas in an etching device and the etching substrate. When the invention is used for etching Al, the injection device is opened to form the gas wall, and when other materials are etched, the injection device is closed, therefore, one same etching substrate can be used for etching not only Al but alsoother materials, thus realizing that one etching substrate can etch a plurality of materials of different properties.

Description

technical field [0001] The invention relates to an etching substrate, in particular to an etching substrate provided with a gas wall. Background technique [0002] The etching process is an important step in the process of manufacturing TFT-LCD array substrates. The etching process is divided into a dry etching process and a wet etching process according to the physical state of the etchant, that is, the dry etching process is an etching process using an etching gas, and the wet etching process is an etching process using an etching liquid. [0003] At present, when aluminum (hereinafter referred to as "Al") is etched by a dry etching process, due to the chemical characteristics of the Al material itself, chlorine gas (hereinafter referred to as "Cl") 2 ") is very sensitive, so in the dry etching device, when the etching gas blown out from the upper air intake device and the central area of ​​the etching substrate is exhausted by the suction device at the lower part of the ...

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a kind of etching substrate that is provided with gas wall, effectively solve the defective that the etching substrate of etching Al and the etching substrate of etching a-Si, SiNx or Mo etc. When etching, it not only etches with high etch rate uniformity, but also does not affect the etch rate uniformity of other materials

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