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Memory element and method for controlling word line signal in power supply starting up/cutting off program

A technology of power cutoff and internal power supply, which is applied in the direction of program control design, electrical digital data processing, digital memory information, etc., and can solve the problems of VDDI lines becoming floating and interfering data, etc.

Active Publication Date: 2012-05-30
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Causes the VDDI lines connected to inverters 104 and 106 to become floating
This can cause glitches on the word lines WL and WLR, thus disturbing the data stored in the memory array

Method used

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  • Memory element and method for controlling word line signal in power supply starting up/cutting off program
  • Memory element and method for controlling word line signal in power supply starting up/cutting off program
  • Memory element and method for controlling word line signal in power supply starting up/cutting off program

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Embodiment Construction

[0018] The present invention relates to an enable / disable sequence mechanism for memory elements. Various embodiments of the invention are merely described below to explain the principles thereof. Those skilled in the art will understand that the present invention can also be applied in various equivalent changes embodying the principles of the present invention although not explicitly described therein.

[0019] figure 2 A turn-on / shutdown sequence mechanism for peripheral circuits of a memory device is shown in accordance with an embodiment of the present invention. For this embodiment, memory elements, such as static random access memory (SRAM), dynamic random access memory (DRAM), flash memory, magnetoresistive random access memory (MRAM), and phase change memory, include: a VDD switch, a VSS switch, an internal power control circuit. The VDD switch opens and closes the current path between the external power supply VDD and the internal power supply VDDI, the VSS switc...

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PUM

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Abstract

The present invention relates to a power supply starting up / cutting off sequence mechanism for a memory element, and concretely provides a method of controlling word wire signals of a memory element in a power supply cutting-off program. The method comprises steps of pulling down word wire signals to a low logic state; cutting off the current path between an external power supplier and an internal power supplier, after the word wire signals are pulled down to the low logic state; and cutting off the current path between an external ground voltage to an internal ground voltage, after the current path between the external power supplier and the internal power supplier is cut off completely.

Description

technical field [0001] The present invention relates generally to integrated circuit (IC) design, and more particularly to memory elements and methods of controlling their wordline signals during power down or start up procedures. Background technique [0002] In some modes for reducing power consumption, such as sleep mode or standby mode, the memory device usually uses a power cut-off mechanism to cut off the power supply of some circuit modules. A general power cut-off mechanism uses an internal power control circuit, a power supply switch (VDD switch), and a ground voltage switch (VSS switch). figure 1 The internal power control circuit 100, VSS switch 130 and VDD switch 160 required for a general power shutdown mechanism are shown. The internal power control circuit 100 is composed of an inverter 102 , the output terminal of the inverter 102 is coupled to the input terminal of the inverter 104 and the input terminal of the inverter 106 . The inverter 102 is connected ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4063G11C11/413G11C5/14G06F9/00
Inventor 陶昌雄陆崇基蓝丽娇
Owner TAIWAN SEMICON MFG CO LTD