Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Diffusion technology of crystalline silicon solar cell

A solar cell and diffusion process technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of poor uniformity, corrosion of quartz parts, poor repeatability, etc., and achieve the effect of improving the uniformity and efficiency of diffusion

Active Publication Date: 2012-05-09
湖南红太阳新能源科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, phosphorus oxychloride (POCl 3 ) has the following disadvantages in the diffusion of liquid sources: (1) poor uniformity; (2) poor repeatability, and there is deviation in the square resistance between the sheets; (3) it is easy to cause a large amount of metaphosphoric acid, which will corrode the quartz parts

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The diffusion process of the crystalline silicon solar cell of the present invention is on the basis of keeping the original other processes unchanged, the diffusion furnace can be selected from the tube type diffusion furnace of the 48th Research Institute of China Electronics Technology Group Corporation, and the format of the process parameters we edit is also according to this Diffusion Furnace Format.

[0017] The process parameters before the source diffusion step remain unchanged, see the following table:

[0018] Diffusion time (S)

Temperature zone one (℃)

Temperature zone two (℃)

Temperature zone three (℃)

Small nitrogen flow rate (ml / m)

Large nitrogen flow rate (ml / m)

Dry oxygen flow(ml / m)

500

830

830

830

0

25000

0

180

830

830

830

0

20000

0

500

840

840

840

0

20000

2400

[0019] The parameter...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a new diffusion technology of the crystalline silicon solar cell. The diffusion technology mainly refers to a technology which divides the source step into the following steps based on the original technology: low temperature prediffusion, step-ramp-temperature elevation diffusion and high temperature diffusion. The technology can significantly enhance the uniformity of the diffusion, well control the depth and surface concentration of the PN junction and increase the photoelectric conversion efficiency of the crystalline silicon solar cell. The new diffusion technology can be edited easily which only needs to modify the original technological parameters so as to facilitate the operation. The technology is applicable to industrialized production, does not affect the production progress and can be used in large-scale production lines of the solar cell.

Description

technical field [0001] The invention belongs to the field of crystalline silicon solar cell manufacturing, and can be used to improve the diffusion process in the solar cell manufacturing, so that the uniformity of diffusion is improved, thereby improving the photoelectric conversion efficiency of the cell sheet. Background technique [0002] In the solar cell manufacturing process, diffusion is the core process and is used to form the pn junction. There are generally three methods for phosphorus diffusion, one is phosphorus oxychloride (POCl 3 ) liquid source diffusion, the second is chain diffusion after spraying phosphoric acid aqueous solution, and the third is chain diffusion after screen printing phosphorus slurry, and what the present invention adopted is the first method. POCl 3 It is an impurity source that is widely used for phosphorus diffusion at present. It decomposes at high temperature (>600°C) to generate phosphorus pentachloride (PCl 5 ) and phosphorus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 程远贵刘恺彭志红田杰成汤辉李功利
Owner 湖南红太阳新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products