Method for separating a semiconductor wafer into individual semiconductor dies using an implanted impurity

Abstract

Provided is a method for separating a semiconductor wafer into individual semiconductor dies. The method for separating the semiconductor wafer, among other steps, may include implanting an impurity into regions of a semiconductor wafer proximate junctions where semiconductor dies join one another, the impurity configured to disrupt bonds in the semiconductor wafer proximate the junctions and lead to weakened regions. The method for separating the semiconductor wafer may further include separating the semiconductor wafer having the impurity into individual semiconductor dies along the weakened regions.

Description

technical field [0001] The present invention generally relates to a method of separating a semiconductor wafer into individual semiconductor dies, and more particularly, to a method of separating a semiconductor wafer into individual semiconductor dies using implanted impurities, and a method of manufacturing semiconductor wafers using implanted impurities. Die method. Background technique [0002] During the fabrication of integrated circuits, multiple integrated circuits (semiconductor dies) are formed simultaneously on a single semiconductor wafer through a series of material deposition and removal processes. The individual semiconductor dies are then separated from the wafer in a process known as dicing. Wafer dicing typically involves sawing the wafer with a circular saw blade or by scribing and breaking the wafer (if the wafer is crystalline). The portion of the semiconductor wafer where the dies are separated is known as an incision, or in semiconductor manufacturin...

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Problems solved by technology

However, there are practical limitations to reducing the blade or scribing tool thickness to obtain a narrower kerf

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