Ultrathin tube shell

Abstract

The invention discloses an ultrathin tube shell, comprising an upper cover, a location member, a base and a circular thick sliver sheet, wherein the upper cover comprises an external ring sheet and a disc-shaped non-oxygenic copper plate; the external ring sheet is connected to the edge of the non-oxygenic copper plate; the base comprises an annular metal sheet, a cylindrical shell, an annular edge and a bottom block; the edge is fixed at the top end of the shell; the upper surface of one end of the annular metal sheet is welded with the shell, and the other end of the annular metal sheet is sleeved and fixed at the lower part of the side wall of the bottom block; the thick sliver sheet is disposed on the bulge of the bottom block; the location member is an annular location ring; the bottom of the location ring is provided with an eave layer shaped ring projected inwardly; the outer wall of the location ring is fitted with the inner wall of the shell in an embedding manner; the inner side of the eave layer shaped ring is contacted with the upper part of the side wall of the bottom block; the outer ring sheet is welded with the edge in a sealing manner. In the invention, the part structure and assembling manner are improved on the original basis; the tube shell is compared with the traditional tube shell for packaging tube cores of the same type, the thickness is reduced about 66%, and the weight is reduced about 73%.

Description

technical field [0001] The invention belongs to the technical field of high-power semiconductors, and in particular relates to an ultra-thin shell used for packaging high-power double-terminal devices. Background technique [0002] At present, in the field of high-power semiconductor manufacturing, more and more attention has been paid to the packaging technology of semiconductor devices. A new type of ultra-high power semiconductor switching device RSD (Reversely Switch-on Dynistor) was invented by Russian scientists in the 1980s. The biggest feature of this device is that it can switch ultra-large pulse power under extremely high di / dt conditions ( The peak power can reach hundreds of megawatts), which can be widely used in artificial simulation of nuclear fusion, electromagnetic weapons, ultra-high-power pulse power supply, electrostatic dust removal, water purification, etc. Since the appearance of the RSD switch, its packaging shell has been using the ZT80dt shell. Thi...

AI Technical Summary

Problems solved by technology

Compared with the traditional package ZT80dt type shell, this structure has a great reduction in size and a lot of weight reduction, but the semiconductor rectifier chip is in direct contact with the cathode and anode metal electrode pressing blocks, which is prone to failure due to thermal expansion mismatch of the chip. Generate shear force, make it uneven and reduce the service life

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